Magnetoresistance in a high-mobility two-dimensional electron gas

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Original languageEnglish
Article number113301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number11
Publication statusPublished - 2 Mar 2011

Abstract

In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al 0.3Ga0.7As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

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Magnetoresistance in a high-mobility two-dimensional electron gas. / Bockhorn, L.; Barthold, P.; Schuh, D. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 11, 113301, 02.03.2011.

Research output: Contribution to journalArticleResearchpeer review

Bockhorn L, Barthold P, Schuh D, Wegscheider W, Haug RJ. Magnetoresistance in a high-mobility two-dimensional electron gas. Physical Review B - Condensed Matter and Materials Physics. 2011 Mar 2;83(11):113301. doi: 10.1103/PhysRevB.83.113301
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@article{34d519a51fc24819b3951c52ef83b6ac,
title = "Magnetoresistance in a high-mobility two-dimensional electron gas",
abstract = "In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al 0.3Ga0.7As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.",
author = "L. Bockhorn and P. Barthold and D. Schuh and W. Wegscheider and Haug, {R. J.}",
year = "2011",
month = mar,
day = "2",
doi = "10.1103/PhysRevB.83.113301",
language = "English",
volume = "83",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Institute of Physics",
number = "11",

}

Download

TY - JOUR

T1 - Magnetoresistance in a high-mobility two-dimensional electron gas

AU - Bockhorn, L.

AU - Barthold, P.

AU - Schuh, D.

AU - Wegscheider, W.

AU - Haug, R. J.

PY - 2011/3/2

Y1 - 2011/3/2

N2 - In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al 0.3Ga0.7As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

AB - In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al 0.3Ga0.7As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

UR - http://www.scopus.com/inward/record.url?scp=79961061788&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.83.113301

DO - 10.1103/PhysRevB.83.113301

M3 - Article

AN - SCOPUS:79961061788

VL - 83

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 11

M1 - 113301

ER -

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