Details
| Original language | English |
|---|---|
| Pages (from-to) | 378-383 |
| Number of pages | 6 |
| Journal | Physica B: Condensed Matter |
| Volume | 227 |
| Issue number | 1-4 |
| Publication status | Published - Sept 1996 |
| Externally published | Yes |
Abstract
We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.
Keywords
- InAlAs-AlGaAs, Inas-GaAs, Self-assembled quantum dots
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Physica B: Condensed Matter, Vol. 227, No. 1-4, 09.1996, p. 378-383.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices
AU - Wang, P. D.
AU - Merz, J. L.
AU - Fafard, S.
AU - Leon, R.
AU - Leonard, D.
AU - Medeiros-Ribeiro, G.
AU - Oestreich, Michael
AU - Petroff, P. M.
AU - Ledentsov, N. N.
AU - Kop'ev, P. S.
AU - Ustinov, V. M.
AU - Uchida, K.
AU - Miura, N.
AU - Akiyama, H.
AU - Sakaki, H.
AU - Sotomayor Torres, C. M.
N1 - Funding information: Support from QUEST, an NSF Science and Technology Center for Quantized Electronic Structures (Grant No. DMR 91-20007), and the NSF International Program (Grant No. INT 93-21727), the IN-TAS (Grant No. 94-481 ) and the UK EPSRC (Grant GR/J90718) is gratefully acknowledged.
PY - 1996/9
Y1 - 1996/9
N2 - We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.
AB - We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.
KW - InAlAs-AlGaAs
KW - Inas-GaAs
KW - Self-assembled quantum dots
UR - http://www.scopus.com/inward/record.url?scp=0030232264&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(96)00447-4
DO - 10.1016/0921-4526(96)00447-4
M3 - Article
AN - SCOPUS:0030232264
VL - 227
SP - 378
EP - 383
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
ER -