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Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • M. A. Wilde
  • M. Rhode
  • Ch Heyn
  • F. Schäffler
  • R. J. Haug

Research Organisations

External Research Organisations

  • Universität Hamburg
  • Johannes Kepler University of Linz (JKU)

Details

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages467-468
Number of pages2
Publication statusPublished - 2 Aug 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB /h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.

ASJC Scopus subject areas

Cite this

Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. / Wilde, M. A.; Rhode, M.; Heyn, Ch et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 467-468 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Wilde, MA, Rhode, M, Heyn, C, Schäffler, F, Zeitler, U, Haug, RJ, Heitmann, D & Grundler, D 2005, Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 467-468, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26 Jul 2004. https://doi.org/10.1063/1.1994186, https://doi.org/10.15488/2816
Wilde, M. A., Rhode, M., Heyn, C., Schäffler, F., Zeitler, U., Haug, R. J., Heitmann, D., & Grundler, D. (2005). Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 467-468). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994186, https://doi.org/10.15488/2816
Wilde MA, Rhode M, Heyn C, Schäffler F, Zeitler U, Haug RJ et al. Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 467-468. (AIP Conference Proceedings). doi: 10.1063/1.1994186, 10.15488/2816
Wilde, M. A. ; Rhode, M. ; Heyn, Ch et al. / Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 467-468 (AIP Conference Proceedings).
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abstract = "We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.",
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AU - Wilde, M. A.

AU - Rhode, M.

AU - Heyn, Ch

AU - Schäffler, F.

AU - Zeitler, U.

AU - Haug, R. J.

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AU - Grundler, D.

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N2 - We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.

AB - We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.

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