Details
| Original language | English |
|---|---|
| Title of host publication | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Editors | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Pages | 1395-1398 |
| Number of pages | 4 |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Publication series
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Volume | B |
Abstract
Results of different types of crystalline silicon solar cells passivated using low-temperature plasma-enhanced chemical vapour deposited (PECVD) films of amorphous silicon (a-Si:H) and silicon nitride (SiNx) are presented. The SiNx films are deposited at 400 °C and the a-Si:H films at 225 °C, respectively. An independently confirmed efficiency of 20.6 % is achieved for SiNx-passivated cells with an additional local back surface field (LBSF) underneath the rear metalised area. The LBSF reduces carrier recombination at the metal contacts and avoids parasitic shunting between the induced inversion layer underneath the SiNx films and the rear contact lines. Furthermore, it is shown that a-Si:H films provide an excellent surface passivation without inducing an inversion layer. Efficiencies of 19.2% are reported for solar cells with a-Si:H rear surface passivation. Open-circuit voltages in excess of 650 mV demonstrate that efficiencies >20% are well achievable for a-Si:H rear surface passivated solar cells.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1395-1398 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Low-temperature rear surface passivation schemes for > 20 % efficient silicon solar cells
AU - Dauwe, S.
AU - Mittelstädt, L.
AU - Metz, A.
AU - Schmidt, J.
AU - Hezel, R.
PY - 2003
Y1 - 2003
N2 - Results of different types of crystalline silicon solar cells passivated using low-temperature plasma-enhanced chemical vapour deposited (PECVD) films of amorphous silicon (a-Si:H) and silicon nitride (SiNx) are presented. The SiNx films are deposited at 400 °C and the a-Si:H films at 225 °C, respectively. An independently confirmed efficiency of 20.6 % is achieved for SiNx-passivated cells with an additional local back surface field (LBSF) underneath the rear metalised area. The LBSF reduces carrier recombination at the metal contacts and avoids parasitic shunting between the induced inversion layer underneath the SiNx films and the rear contact lines. Furthermore, it is shown that a-Si:H films provide an excellent surface passivation without inducing an inversion layer. Efficiencies of 19.2% are reported for solar cells with a-Si:H rear surface passivation. Open-circuit voltages in excess of 650 mV demonstrate that efficiencies >20% are well achievable for a-Si:H rear surface passivated solar cells.
AB - Results of different types of crystalline silicon solar cells passivated using low-temperature plasma-enhanced chemical vapour deposited (PECVD) films of amorphous silicon (a-Si:H) and silicon nitride (SiNx) are presented. The SiNx films are deposited at 400 °C and the a-Si:H films at 225 °C, respectively. An independently confirmed efficiency of 20.6 % is achieved for SiNx-passivated cells with an additional local back surface field (LBSF) underneath the rear metalised area. The LBSF reduces carrier recombination at the metal contacts and avoids parasitic shunting between the induced inversion layer underneath the SiNx films and the rear contact lines. Furthermore, it is shown that a-Si:H films provide an excellent surface passivation without inducing an inversion layer. Efficiencies of 19.2% are reported for solar cells with a-Si:H rear surface passivation. Open-circuit voltages in excess of 650 mV demonstrate that efficiencies >20% are well achievable for a-Si:H rear surface passivated solar cells.
UR - http://www.scopus.com/inward/record.url?scp=3142736155&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:3142736155
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 1395
EP - 1398
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -