Details
| Original language | English |
|---|---|
| Article number | 035017 |
| Pages (from-to) | 035017 |
| Journal | Semiconductor Science and Technology |
| Volume | 37 |
| Issue number | 3 |
| Publication status | Published - 31 Jan 2022 |
Abstract
We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.
Keywords
- GaInN/GaN quantum wells, internal quantum efficiency, LEDs, PL efficiency
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Materials Chemistry
- Engineering(all)
- Electrical and Electronic Engineering
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In: Semiconductor Science and Technology, Vol. 37, No. 3, 035017, 31.01.2022, p. 035017.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions
AU - Sidikejiang, Shawutijiang
AU - Henning, Philipp
AU - Horenburg, Philipp
AU - Bremers, Heiko
AU - Rossow, Uwe
AU - Menzel, Dirk
AU - Hangleiter, Andreas
N1 - Publisher Copyright: © 2022 The Author(s). Published by IOP Publishing Ltd.
PY - 2022/1/31
Y1 - 2022/1/31
N2 - We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.
AB - We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.
KW - GaInN/GaN quantum wells
KW - internal quantum efficiency
KW - LEDs
KW - PL efficiency
UR - http://www.scopus.com/inward/record.url?scp=85125466280&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ac4b89
DO - 10.1088/1361-6641/ac4b89
M3 - Article
VL - 37
SP - 035017
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
M1 - 035017
ER -