Low-temperature hysteresis in the field effect of bilayer graphene

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Original languageEnglish
Article number043020
JournalNew journal of physics
Volume13
Publication statusPublished - 1 Apr 2011

Abstract

Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant.

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Low-temperature hysteresis in the field effect of bilayer graphene. / Barthold, P.; Lüdtke, T.; Schmidt, H. et al.
In: New journal of physics, Vol. 13, 043020, 01.04.2011.

Research output: Contribution to journalArticleResearchpeer review

Barthold P, Lüdtke T, Schmidt H, Haug RJ. Low-temperature hysteresis in the field effect of bilayer graphene. New journal of physics. 2011 Apr 1;13:043020. doi: 10.1088/1367-2630/13/4/043020
Barthold, P. ; Lüdtke, T. ; Schmidt, H. et al. / Low-temperature hysteresis in the field effect of bilayer graphene. In: New journal of physics. 2011 ; Vol. 13.
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