Details
| Original language | English |
|---|---|
| Article number | 137402 |
| Number of pages | 5 |
| Journal | Physical review letters |
| Volume | 126 |
| Issue number | 13 |
| Publication status | Published - 30 Mar 2021 |
Abstract
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped Si28:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The Si28:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T9 dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T7 dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the Si28:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.
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In: Physical review letters, Vol. 126, No. 13, 137402, 30.03.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Low Temperature Relaxation of Donor Bound Electron Spins in 28Si∶P
AU - Sauter, E.
AU - Abrosimov, N. V.
AU - Hübner, J.
AU - Oestreich, M.
N1 - Funding Information: We thank M. Glazov and M. Durnev for helpful discussions. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy - EXC-2123 QuantumFrontiers - 390837967, research training group 1991, and OE 177/10-2.
PY - 2021/3/30
Y1 - 2021/3/30
N2 - We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped Si28:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The Si28:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T9 dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T7 dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the Si28:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.
AB - We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped Si28:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The Si28:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T9 dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T7 dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the Si28:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.
UR - http://www.scopus.com/inward/record.url?scp=85104385808&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.126.137402
DO - 10.1103/PhysRevLett.126.137402
M3 - Article
C2 - 33861119
AN - SCOPUS:85104385808
VL - 126
JO - Physical review letters
JF - Physical review letters
SN - 0031-9007
IS - 13
M1 - 137402
ER -