Details
| Original language | English |
|---|---|
| Pages (from-to) | 263-268 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 8 |
| Early online date | 12 Aug 2011 |
| Publication status | Published - 2011 |
Abstract
We model currently fabricated industrial-type screen-printed boron-doped Cz silicon solar cells using a combination of process and device simulations. The model reproduces the experimental results precisely and allows us to predict both the efficiency gain after specific cell improvements and the associated thermal budgets. Separating the resistive losses (evaluated for various contributions) from the recombination losses (evaluated in different device regions) allows us to forecast the improvements of the emitter and the rear side necessary such that the recombination losses in the base dominate. We predict that to increase cell efficiency considerably beyond 19.7 %, the base material needs to be improved.
Keywords
- Cz-Si, Device simulations, Loss analysis, Process simulations, Si solar cells, Solar cell improvement
ASJC Scopus subject areas
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Energy Procedia, Vol. 8, 2011, p. 263-268.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Loss analysis and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations
AU - Steingrube, S.
AU - Wagner, H.
AU - Hannebauer, H.
AU - Gatz, S.
AU - Chen, Renyu
AU - Dunham, S. T.
AU - Dullweber, T.
AU - Altermatt, P. P.
AU - Brendel, R.
PY - 2011
Y1 - 2011
N2 - We model currently fabricated industrial-type screen-printed boron-doped Cz silicon solar cells using a combination of process and device simulations. The model reproduces the experimental results precisely and allows us to predict both the efficiency gain after specific cell improvements and the associated thermal budgets. Separating the resistive losses (evaluated for various contributions) from the recombination losses (evaluated in different device regions) allows us to forecast the improvements of the emitter and the rear side necessary such that the recombination losses in the base dominate. We predict that to increase cell efficiency considerably beyond 19.7 %, the base material needs to be improved.
AB - We model currently fabricated industrial-type screen-printed boron-doped Cz silicon solar cells using a combination of process and device simulations. The model reproduces the experimental results precisely and allows us to predict both the efficiency gain after specific cell improvements and the associated thermal budgets. Separating the resistive losses (evaluated for various contributions) from the recombination losses (evaluated in different device regions) allows us to forecast the improvements of the emitter and the rear side necessary such that the recombination losses in the base dominate. We predict that to increase cell efficiency considerably beyond 19.7 %, the base material needs to be improved.
KW - Cz-Si
KW - Device simulations
KW - Loss analysis
KW - Process simulations
KW - Si solar cells
KW - Solar cell improvement
UR - http://www.scopus.com/inward/record.url?scp=80052088048&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.134
DO - 10.1016/j.egypro.2011.06.134
M3 - Article
AN - SCOPUS:80052088048
VL - 8
SP - 263
EP - 268
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -