Details
| Original language | English |
|---|---|
| Article number | 7480385 |
| Pages (from-to) | 2852-2857 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 63 |
| Issue number | 7 |
| Early online date | 27 May 2016 |
| Publication status | Published - Jul 2016 |
Abstract
The (Nd1-xGdx)2O3 thin films were grown on Si(001) in 2005 using molecular beam epitaxy followed by an in vacuo metallization of Pt contacts. Pt/(Nd1-xGdx)2O3/Si(001) metal-oxide-semiconductor structures have been characterized several times over the period of 2005-2015 in order to investigate the stability of their physical and electrical properties. Core-level X-ray photoelectron spectroscopy (XPS) spectra remeasured during 2015 depict that the layer still retains its original properties that were measured in 2005. Although there has been some degradation of electrical properties such as capacitance and leakage current over several years, interestingly the midgap density of interface traps' (Dit) value has been found to be decreased from 1.1 × 1012 to 3.5 × 1011 eV-1 cm -2 over the years. The formation of silicate-like interface inferred from XPS measurements can be attributed to such an improvement over this period. Time-dependent dielectric breakdown measurements under constant current stress and constant voltage stress were also carried out to investigate the reliability of the structure.
Keywords
- Epitaxial oxide, high-K dielectric, molecular beam epitaxy (MBE), reliability
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Transactions on Electron Devices, Vol. 63, No. 7, 7480385, 07.2016, p. 2852-2857.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices
AU - Ghosh, Kankat
AU - Das, Sudipta
AU - Fissel, Andreas
AU - Osten, H. Jörg
AU - Laha, Apurba
N1 - Funding Information: The work of K. Ghosh, S. Das, and A. Laha was supported by the Science and Engineering Research Board through the Department of Science and Technology and Department of Electronics and Information Technology, Government of India.
PY - 2016/7
Y1 - 2016/7
N2 - The (Nd1-xGdx)2O3 thin films were grown on Si(001) in 2005 using molecular beam epitaxy followed by an in vacuo metallization of Pt contacts. Pt/(Nd1-xGdx)2O3/Si(001) metal-oxide-semiconductor structures have been characterized several times over the period of 2005-2015 in order to investigate the stability of their physical and electrical properties. Core-level X-ray photoelectron spectroscopy (XPS) spectra remeasured during 2015 depict that the layer still retains its original properties that were measured in 2005. Although there has been some degradation of electrical properties such as capacitance and leakage current over several years, interestingly the midgap density of interface traps' (Dit) value has been found to be decreased from 1.1 × 1012 to 3.5 × 1011 eV-1 cm -2 over the years. The formation of silicate-like interface inferred from XPS measurements can be attributed to such an improvement over this period. Time-dependent dielectric breakdown measurements under constant current stress and constant voltage stress were also carried out to investigate the reliability of the structure.
AB - The (Nd1-xGdx)2O3 thin films were grown on Si(001) in 2005 using molecular beam epitaxy followed by an in vacuo metallization of Pt contacts. Pt/(Nd1-xGdx)2O3/Si(001) metal-oxide-semiconductor structures have been characterized several times over the period of 2005-2015 in order to investigate the stability of their physical and electrical properties. Core-level X-ray photoelectron spectroscopy (XPS) spectra remeasured during 2015 depict that the layer still retains its original properties that were measured in 2005. Although there has been some degradation of electrical properties such as capacitance and leakage current over several years, interestingly the midgap density of interface traps' (Dit) value has been found to be decreased from 1.1 × 1012 to 3.5 × 1011 eV-1 cm -2 over the years. The formation of silicate-like interface inferred from XPS measurements can be attributed to such an improvement over this period. Time-dependent dielectric breakdown measurements under constant current stress and constant voltage stress were also carried out to investigate the reliability of the structure.
KW - Epitaxial oxide
KW - high-K dielectric
KW - molecular beam epitaxy (MBE)
KW - reliability
UR - http://www.scopus.com/inward/record.url?scp=84971375807&partnerID=8YFLogxK
U2 - 10.1109/TED.2016.2566681
DO - 10.1109/TED.2016.2566681
M3 - Article
AN - SCOPUS:84971375807
VL - 63
SP - 2852
EP - 2857
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 7
M1 - 7480385
ER -