Details
| Original language | English |
|---|---|
| Pages (from-to) | 6286–6291 |
| Number of pages | 6 |
| Journal | ACS Applied Electronic Materials |
| Volume | 5 |
| Issue number | 11 |
| Early online date | 24 Oct 2023 |
| Publication status | Published - 28 Nov 2023 |
Abstract
In the search for two-dimensional (2D) materials, transition-metal trichalcogenides (TMTCs) have emerged as promising candidates for optoelectronic applications. Here, we show a very long-lasting persistent photoconductivity (PPC) over several hours in thin films of the TMTC zirconium trisulfide (ZrS3) at room temperature when illuminated with a 470 nm LED. ZrS3 crystals were grown using chemical vapor transport. UV-vis spectroscopy showed an indirect band gap of 1.81 eV and an Urbach energy of 83 meV, indicating that the system has a large number of defects. Transistor measurements on thin layers with thicknesses varying between 19 and 50 nm showed ZrS3 to be an n-type semiconductor. The conductivity increases under illumination, and it only reaches the original state several hours after switching off the illumination. This PPC can be described by using a stretched exponential function. On top of that, the sum of three exponential functions with tree different relaxation times fits the observed PPC nearly equally well. This shows that three processes dominate the relaxation. The three observed processes can be differentiated with respect to their origin by their dependence on the thickness of the thin layers.
Keywords
- 2D materials, chemical vapor transport, defects, field effect, persistent photoconductivity, transition-metal trichalcogenides, Urbach energy, ZrS
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Materials Chemistry
- Chemistry(all)
- Electrochemistry
Sustainable Development Goals
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In: ACS Applied Electronic Materials, Vol. 5, No. 11, 28.11.2023, p. 6286–6291.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Long-Persistent Photoconductivity in Transistor Structures Made from Thin ZrS3-Films
AU - Thole, Lars
AU - Ben Kalefa, Asem
AU - Belke, Christopher
AU - Locmelis, Sonja
AU - Bockhorn, Lina
AU - Behrens, Peter
AU - Haug, Rolf J.
N1 - Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy-EXC 2123 Quantum Frontiers-390837967 and EXC 2122 PhoenixD-390833453 and within the Priority Program SPP 2244 ‘2DMP’.
PY - 2023/11/28
Y1 - 2023/11/28
N2 - In the search for two-dimensional (2D) materials, transition-metal trichalcogenides (TMTCs) have emerged as promising candidates for optoelectronic applications. Here, we show a very long-lasting persistent photoconductivity (PPC) over several hours in thin films of the TMTC zirconium trisulfide (ZrS3) at room temperature when illuminated with a 470 nm LED. ZrS3 crystals were grown using chemical vapor transport. UV-vis spectroscopy showed an indirect band gap of 1.81 eV and an Urbach energy of 83 meV, indicating that the system has a large number of defects. Transistor measurements on thin layers with thicknesses varying between 19 and 50 nm showed ZrS3 to be an n-type semiconductor. The conductivity increases under illumination, and it only reaches the original state several hours after switching off the illumination. This PPC can be described by using a stretched exponential function. On top of that, the sum of three exponential functions with tree different relaxation times fits the observed PPC nearly equally well. This shows that three processes dominate the relaxation. The three observed processes can be differentiated with respect to their origin by their dependence on the thickness of the thin layers.
AB - In the search for two-dimensional (2D) materials, transition-metal trichalcogenides (TMTCs) have emerged as promising candidates for optoelectronic applications. Here, we show a very long-lasting persistent photoconductivity (PPC) over several hours in thin films of the TMTC zirconium trisulfide (ZrS3) at room temperature when illuminated with a 470 nm LED. ZrS3 crystals were grown using chemical vapor transport. UV-vis spectroscopy showed an indirect band gap of 1.81 eV and an Urbach energy of 83 meV, indicating that the system has a large number of defects. Transistor measurements on thin layers with thicknesses varying between 19 and 50 nm showed ZrS3 to be an n-type semiconductor. The conductivity increases under illumination, and it only reaches the original state several hours after switching off the illumination. This PPC can be described by using a stretched exponential function. On top of that, the sum of three exponential functions with tree different relaxation times fits the observed PPC nearly equally well. This shows that three processes dominate the relaxation. The three observed processes can be differentiated with respect to their origin by their dependence on the thickness of the thin layers.
KW - 2D materials
KW - chemical vapor transport
KW - defects
KW - field effect
KW - persistent photoconductivity
KW - transition-metal trichalcogenides
KW - Urbach energy
KW - ZrS
UR - http://www.scopus.com/inward/record.url?scp=85177789878&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.3c01163
DO - 10.1021/acsaelm.3c01163
M3 - Article
AN - SCOPUS:85177789878
VL - 5
SP - 6286
EP - 6291
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 11
ER -