Details
| Original language | English |
|---|---|
| Pages (from-to) | 799-806 |
| Number of pages | 8 |
| Journal | Science and Technology of Advanced Materials |
| Volume | 17 |
| Issue number | 1 |
| Publication status | Published - 25 Nov 2016 |
Abstract
LaF3/SrF2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10-1-106 Hz and a temperature range 300-570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius- Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF3 bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La1-xSrxF3-x solution at the interface during the growth process.
Keywords
- Heterostructures, Impedance spectroscopy, Interfacial spacing, Ionic conductivity, Lanthanum fluoride, Longitudinal conductivity, Molecular beam epitaxy, Strontium fluoride
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
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In: Science and Technology of Advanced Materials, Vol. 17, No. 1, 25.11.2016, p. 799-806.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Longitudinal conductivity of LaF3/SrF2 multilayer heterostructures
AU - Vergentev, Tikhon
AU - Banshchikov, Alexander
AU - Filimonov, Alexey
AU - Koroleva, Ekaterina
AU - Sokolov, Nikolay
AU - Wurz, Marc Christopher
N1 - Funding Information: The authors gratefully acknowledge Dr Nashchekin for SEM study. The work at SPbPU was performed under the government order of Ministry of Education and Science of the Russian Federation. Publisher Copyright: © 2016 The Author(s). Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/11/25
Y1 - 2016/11/25
N2 - LaF3/SrF2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10-1-106 Hz and a temperature range 300-570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius- Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF3 bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La1-xSrxF3-x solution at the interface during the growth process.
AB - LaF3/SrF2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10-1-106 Hz and a temperature range 300-570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius- Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF3 bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La1-xSrxF3-x solution at the interface during the growth process.
KW - Heterostructures
KW - Impedance spectroscopy
KW - Interfacial spacing
KW - Ionic conductivity
KW - Lanthanum fluoride
KW - Longitudinal conductivity
KW - Molecular beam epitaxy
KW - Strontium fluoride
UR - http://www.scopus.com/inward/record.url?scp=84997418666&partnerID=8YFLogxK
U2 - 10.1080/14686996.2016.1246940
DO - 10.1080/14686996.2016.1246940
M3 - Article
AN - SCOPUS:84997418666
VL - 17
SP - 799
EP - 806
JO - Science and Technology of Advanced Materials
JF - Science and Technology of Advanced Materials
SN - 1468-6996
IS - 1
ER -