Local aluminum-silicon contacts by layer selective laser ablation

Research output: Contribution to journal › Article › Research › peer review

Authors

  • F. Haase
  • T. Neubert
  • R. Horbelt
  • B. Terheiden
  • K. Bothe
  • R. Brendel

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
  • University of Konstanz
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Details

Original languageEnglish
Pages (from-to)2698-2700
Number of pages3
JournalSolar Energy Materials and Solar Cells
Volume95
Issue number9
Early online date3 Jun 2011
Publication statusPublished - Sept 2011
Externally publishedYes

Abstract

We demonstrate damage free selective laser ablation of silicon nitride from a silicon nitride/amorphous silicon double layer. This approach allows local contact formation to passivated silicon. Thereby the remaining amorphous silicon dissolves in evaporated aluminum by annealing. This technique is especially useful for contacting thin emitters since it avoids any damage to the silicon substrate. We demonstrate a local contact resistivity of 0.8±0.3 mΩ cm2 on a phosphorous diffused emitter with a peak doping density of 2×1020 cm-3. Laser treated as well as non-treated areas show the same carrier lifetime of 2000 μs on 100 Ω cm mono-crystalline silicon, proving the selective ablation.

Keywords

    Amorphous silicon passivation, Local contact openings, Selective laser ablation, Ultraviolet pico second laser

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Local aluminum-silicon contacts by layer selective laser ablation. / Haase, F.; Neubert, T.; Horbelt, R. et al.
In: Solar Energy Materials and Solar Cells, Vol. 95, No. 9, 09.2011, p. 2698-2700.

Research output: Contribution to journal › Article › Research › peer review

Haase, F, Neubert, T, Horbelt, R, Terheiden, B, Bothe, K & Brendel, R 2011, 'Local aluminum-silicon contacts by layer selective laser ablation', Solar Energy Materials and Solar Cells, vol. 95, no. 9, pp. 2698-2700. https://doi.org/10.1016/j.solmat.2011.05.015
Haase, F., Neubert, T., Horbelt, R., Terheiden, B., Bothe, K., & Brendel, R. (2011). Local aluminum-silicon contacts by layer selective laser ablation. Solar Energy Materials and Solar Cells, 95(9), 2698-2700. https://doi.org/10.1016/j.solmat.2011.05.015
Haase F, Neubert T, Horbelt R, Terheiden B, Bothe K, Brendel R. Local aluminum-silicon contacts by layer selective laser ablation. Solar Energy Materials and Solar Cells. 2011 Sept;95(9):2698-2700. Epub 2011 Jun 3. doi: 10.1016/j.solmat.2011.05.015
Haase, F. ; Neubert, T. ; Horbelt, R. et al. / Local aluminum-silicon contacts by layer selective laser ablation. In: Solar Energy Materials and Solar Cells. 2011 ; Vol. 95, No. 9. pp. 2698-2700.
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AU - Haase, F.

AU - Neubert, T.

AU - Horbelt, R.

AU - Terheiden, B.

AU - Bothe, K.

AU - Brendel, R.

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AB - We demonstrate damage free selective laser ablation of silicon nitride from a silicon nitride/amorphous silicon double layer. This approach allows local contact formation to passivated silicon. Thereby the remaining amorphous silicon dissolves in evaporated aluminum by annealing. This technique is especially useful for contacting thin emitters since it avoids any damage to the silicon substrate. We demonstrate a local contact resistivity of 0.8±0.3 mΩ cm2 on a phosphorous diffused emitter with a peak doping density of 2×1020 cm-3. Laser treated as well as non-treated areas show the same carrier lifetime of 2000 μs on 100 Ω cm mono-crystalline silicon, proving the selective ablation.

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