Details
| Original language | English |
|---|---|
| Pages (from-to) | 2-5 |
| Number of pages | 4 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 173 |
| Publication status | Published - Dec 2017 |
Abstract
We examine the defect activation kinetics in block-cast high-performance multicrystalline silicon (HP mc-Si) under illumination at elevated temperature. Our lifetime analysis shows that the observed light-induced lifetime degradation consists of two separate stages: a fast stage followed by a slow stage. Our experiments reveal that both degradation stages can be fitted using a sum of two exponential decay functions. The resulting degradation rate constants depend both on the temperature and the light intensity applied during degradation. For the fast component, we determine an activation energy of (0.89 ± 0.04) eV from an Arrhenius plot of the degradation rate and for the slow component we determine a value of (0.94 ± 0.06) eV. The activation energies are relatively large, leading to a very pronounced dependence of the degradation rates on temperature. We also observe that both degradation rates show a linear dependence on the applied light intensity during degradation in the examined intensity range between 0.25 and 1.5 suns.
Keywords
- Carrier lifetime, Degradation, Multicrystalline silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 173, 12.2017, p. 2-5.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Light-induced lifetime degradation in high-performance multicrystalline silicon: Detailed kinetics of the defect activation
AU - Bredemeier, Dennis
AU - Walter, Dominic C.
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2017 Elsevier B.V.
PY - 2017/12
Y1 - 2017/12
N2 - We examine the defect activation kinetics in block-cast high-performance multicrystalline silicon (HP mc-Si) under illumination at elevated temperature. Our lifetime analysis shows that the observed light-induced lifetime degradation consists of two separate stages: a fast stage followed by a slow stage. Our experiments reveal that both degradation stages can be fitted using a sum of two exponential decay functions. The resulting degradation rate constants depend both on the temperature and the light intensity applied during degradation. For the fast component, we determine an activation energy of (0.89 ± 0.04) eV from an Arrhenius plot of the degradation rate and for the slow component we determine a value of (0.94 ± 0.06) eV. The activation energies are relatively large, leading to a very pronounced dependence of the degradation rates on temperature. We also observe that both degradation rates show a linear dependence on the applied light intensity during degradation in the examined intensity range between 0.25 and 1.5 suns.
AB - We examine the defect activation kinetics in block-cast high-performance multicrystalline silicon (HP mc-Si) under illumination at elevated temperature. Our lifetime analysis shows that the observed light-induced lifetime degradation consists of two separate stages: a fast stage followed by a slow stage. Our experiments reveal that both degradation stages can be fitted using a sum of two exponential decay functions. The resulting degradation rate constants depend both on the temperature and the light intensity applied during degradation. For the fast component, we determine an activation energy of (0.89 ± 0.04) eV from an Arrhenius plot of the degradation rate and for the slow component we determine a value of (0.94 ± 0.06) eV. The activation energies are relatively large, leading to a very pronounced dependence of the degradation rates on temperature. We also observe that both degradation rates show a linear dependence on the applied light intensity during degradation in the examined intensity range between 0.25 and 1.5 suns.
KW - Carrier lifetime
KW - Degradation
KW - Multicrystalline silicon
UR - http://www.scopus.com/inward/record.url?scp=85027401360&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2017.08.007
DO - 10.1016/j.solmat.2017.08.007
M3 - Article
VL - 173
SP - 2
EP - 5
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -