Details
| Original language | English |
|---|---|
| Pages (from-to) | 187-196 |
| Number of pages | 10 |
| Journal | Solid State Phenomena |
| Volume | 95-96 |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | 10th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology, GADEST 2003 - Brandenburg, Germany Duration: 21 Sept 2003 → 26 Sept 2003 |
Abstract
Solar cells manufactured on single-crystalline boron-doped Czochralski-grown silicon (Cz-Si) degrade in efficiency by up to 10% (relative) when exposed to light or minority carriers are injected in the dark until a stable level of performance is reached. This effect, which is now known for 30 years, is due to the activation of a specific metastable defect in the silicon bulk. Although a conclusive explanation of the effect is still to be found, recent investigations have clearly revealed that the metastable defect is correlated with the boron and the oxygen concentration in the material. In block-cast multicrystalline silicon (mc-Si) the same degradation behavior can be observed, but due to the lower oxygen content of mc-Si compared to Cz-Si, the degradation occurs to a lesser extent. The first part of this paper reviews the current status of the physical understanding of the degradation effect and gives an overview of the defect models proposed in the literature. In the second part, an overview of different strategies for avoiding or reducing the degradation is presented.
Keywords
- Carrier Lifetime, Czochralski Silicon, Degradation, Metastability, Multicrystalline Silicon, Silicon Solar Cell
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Solid State Phenomena, Vol. 95-96, 2004, p. 187-196.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Light-Induced Degradation in Crystalline Silicon Solar Cells
AU - Schmidt, Jan
PY - 2004
Y1 - 2004
N2 - Solar cells manufactured on single-crystalline boron-doped Czochralski-grown silicon (Cz-Si) degrade in efficiency by up to 10% (relative) when exposed to light or minority carriers are injected in the dark until a stable level of performance is reached. This effect, which is now known for 30 years, is due to the activation of a specific metastable defect in the silicon bulk. Although a conclusive explanation of the effect is still to be found, recent investigations have clearly revealed that the metastable defect is correlated with the boron and the oxygen concentration in the material. In block-cast multicrystalline silicon (mc-Si) the same degradation behavior can be observed, but due to the lower oxygen content of mc-Si compared to Cz-Si, the degradation occurs to a lesser extent. The first part of this paper reviews the current status of the physical understanding of the degradation effect and gives an overview of the defect models proposed in the literature. In the second part, an overview of different strategies for avoiding or reducing the degradation is presented.
AB - Solar cells manufactured on single-crystalline boron-doped Czochralski-grown silicon (Cz-Si) degrade in efficiency by up to 10% (relative) when exposed to light or minority carriers are injected in the dark until a stable level of performance is reached. This effect, which is now known for 30 years, is due to the activation of a specific metastable defect in the silicon bulk. Although a conclusive explanation of the effect is still to be found, recent investigations have clearly revealed that the metastable defect is correlated with the boron and the oxygen concentration in the material. In block-cast multicrystalline silicon (mc-Si) the same degradation behavior can be observed, but due to the lower oxygen content of mc-Si compared to Cz-Si, the degradation occurs to a lesser extent. The first part of this paper reviews the current status of the physical understanding of the degradation effect and gives an overview of the defect models proposed in the literature. In the second part, an overview of different strategies for avoiding or reducing the degradation is presented.
KW - Carrier Lifetime
KW - Czochralski Silicon
KW - Degradation
KW - Metastability
KW - Multicrystalline Silicon
KW - Silicon Solar Cell
UR - http://www.scopus.com/inward/record.url?scp=1642520008&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:1642520008
VL - 95-96
SP - 187
EP - 196
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1012-0394
T2 - 10th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology, GADEST 2003
Y2 - 21 September 2003 through 26 September 2003
ER -