Details
| Original language | English |
|---|---|
| Article number | 093704 |
| Journal | Journal of applied physics |
| Volume | 105 |
| Issue number | 9 |
| Publication status | Published - 2009 |
| Externally published | Yes |
Abstract
The concentration of boron-oxygen defects generated in compensated p -type Czochralski silicon has been measured via carrier lifetime measurements taken before and after activating the defect with illumination. The rate of formation of these defects was also measured. Both the concentration and the rate were found to depend on the net doping rather than the total boron concentration. These results imply that the additional compensated boron exists in a form that is not able to bond with the oxygen dimers, thus prohibiting the formation of the defect. This could be explained by the presence of boron-phosphorus complexes, as proposed in previous work. Evidence for reduced carrier mobilities in compensated silicon is also presented, which has implications for photoconductance-based carrier lifetime measurements and solar cell performance.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 105, No. 9, 093704, 2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon
AU - MacDonald, D.
AU - Rougieux, F.
AU - Cuevas, A.
AU - Lim, B.
AU - Schmidt, J.
AU - Di Sabatino, M.
AU - Geerligs, L. J.
N1 - Funding Information: D.M. is supported by an Australian Research Council QEII Fellowship, L.J.G. acknowledges SenterNovem for support, and B.L. and J.S. acknowledge the support of the German Academic Exchange Service. The authors are grateful to Kai Petter of Q-cells for kindly providing the silicon wafers, Chris Samundsett of ANU for sample preparation, and Ron Sinton of Sinton Consulting for providing a QSSPC data analysis package with easily adjusted mobilities.
PY - 2009
Y1 - 2009
N2 - The concentration of boron-oxygen defects generated in compensated p -type Czochralski silicon has been measured via carrier lifetime measurements taken before and after activating the defect with illumination. The rate of formation of these defects was also measured. Both the concentration and the rate were found to depend on the net doping rather than the total boron concentration. These results imply that the additional compensated boron exists in a form that is not able to bond with the oxygen dimers, thus prohibiting the formation of the defect. This could be explained by the presence of boron-phosphorus complexes, as proposed in previous work. Evidence for reduced carrier mobilities in compensated silicon is also presented, which has implications for photoconductance-based carrier lifetime measurements and solar cell performance.
AB - The concentration of boron-oxygen defects generated in compensated p -type Czochralski silicon has been measured via carrier lifetime measurements taken before and after activating the defect with illumination. The rate of formation of these defects was also measured. Both the concentration and the rate were found to depend on the net doping rather than the total boron concentration. These results imply that the additional compensated boron exists in a form that is not able to bond with the oxygen dimers, thus prohibiting the formation of the defect. This could be explained by the presence of boron-phosphorus complexes, as proposed in previous work. Evidence for reduced carrier mobilities in compensated silicon is also presented, which has implications for photoconductance-based carrier lifetime measurements and solar cell performance.
UR - http://www.scopus.com/inward/record.url?scp=67249100301&partnerID=8YFLogxK
U2 - 10.1063/1.3121208
DO - 10.1063/1.3121208
M3 - Article
AN - SCOPUS:67249100301
VL - 105
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 9
M1 - 093704
ER -