Details
| Original language | English |
|---|---|
| Article number | 8089 |
| Journal | Scientific reports |
| Volume | 12 |
| Issue number | 1 |
| Publication status | Published - 16 May 2022 |
Abstract
The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.
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In: Scientific reports, Vol. 12, No. 1, 8089, 16.05.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells
AU - Winter, Michael
AU - Walter, Dominic C.
AU - Min, Byungsul
AU - Peibst, Robby
AU - Brendel, Rolf
AU - Schmidt, Jan
N1 - Funding Information: This work was supported by the German State of Lower Saxony and by the German Federal Ministry for Economic Affairs and Climate Action (BMWK) under Grant number 03EE1012A (NanoPERC). The content is the responsibility of the authors. The publication of this article was funded by the Open Access fund of Leibniz University Hannover.
PY - 2022/5/16
Y1 - 2022/5/16
N2 - The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.
AB - The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.
UR - http://www.scopus.com/inward/record.url?scp=85130172486&partnerID=8YFLogxK
U2 - 10.1038/s41598-022-11831-3
DO - 10.1038/s41598-022-11831-3
M3 - Article
C2 - 35577833
AN - SCOPUS:85130172486
VL - 12
JO - Scientific reports
JF - Scientific reports
SN - 2045-2322
IS - 1
M1 - 8089
ER -