Details
| Original language | English |
|---|---|
| Pages (from-to) | 919-925 |
| Number of pages | 7 |
| Journal | Energy Procedia |
| Volume | 38 |
| Early online date | 5 Sept 2013 |
| Publication status | Published - 2013 |
| Event | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany Duration: 25 Mar 2013 → 27 Mar 2013 |
Abstract
We discuss the lift-off of free-standing epitaxially grown silicon layers from the porous silicon (PSI) process, which is a kerfless wafering technology. The lift-off is a crucial step in the PSI cycle. A high-porosity layer serves as a mechanically weak layer for lift-off and consists of widely spaced silicon bridges with thicknesses of 40-100 nm. The low width leads to a 33-fold stress enhancement in the bridges, making them break when a force is applied while the epitaxial layer and the substrate remain intact. We perform the free-standing lift-off with a curved vacuum chuck. A vacuum pressure of 0.2 bar is sufficient for controlled peeling off of the 30-50 um thick silicon layers. We simulate the stresses and the displacements of the epitaxial layer in the lift-off process close to the first non-broken bridge. We demonstrate the defect-free lift-off of 8 of 9 of 9 × 9 cm2 layers from 6″ substrates.
Keywords
- Kerfless wafering, Layer transfer, Lift-off, Porous silicon
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 38, 2013, p. 919-925.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Lift-off of free-standing layers in the kerfless porous silicon process
AU - Kajari-Schröder, Sarah
AU - Käsewieter, Jörg
AU - Hensen, Jan
AU - Brendel, Rolf
N1 - Funding Information: The authors thank Renate Winter for sample preparation and Johannes Aprojanz for performing simulations. We gratefully acknowledge financial support by the Renewable Energy Corporation.
PY - 2013
Y1 - 2013
N2 - We discuss the lift-off of free-standing epitaxially grown silicon layers from the porous silicon (PSI) process, which is a kerfless wafering technology. The lift-off is a crucial step in the PSI cycle. A high-porosity layer serves as a mechanically weak layer for lift-off and consists of widely spaced silicon bridges with thicknesses of 40-100 nm. The low width leads to a 33-fold stress enhancement in the bridges, making them break when a force is applied while the epitaxial layer and the substrate remain intact. We perform the free-standing lift-off with a curved vacuum chuck. A vacuum pressure of 0.2 bar is sufficient for controlled peeling off of the 30-50 um thick silicon layers. We simulate the stresses and the displacements of the epitaxial layer in the lift-off process close to the first non-broken bridge. We demonstrate the defect-free lift-off of 8 of 9 of 9 × 9 cm2 layers from 6″ substrates.
AB - We discuss the lift-off of free-standing epitaxially grown silicon layers from the porous silicon (PSI) process, which is a kerfless wafering technology. The lift-off is a crucial step in the PSI cycle. A high-porosity layer serves as a mechanically weak layer for lift-off and consists of widely spaced silicon bridges with thicknesses of 40-100 nm. The low width leads to a 33-fold stress enhancement in the bridges, making them break when a force is applied while the epitaxial layer and the substrate remain intact. We perform the free-standing lift-off with a curved vacuum chuck. A vacuum pressure of 0.2 bar is sufficient for controlled peeling off of the 30-50 um thick silicon layers. We simulate the stresses and the displacements of the epitaxial layer in the lift-off process close to the first non-broken bridge. We demonstrate the defect-free lift-off of 8 of 9 of 9 × 9 cm2 layers from 6″ substrates.
KW - Kerfless wafering
KW - Layer transfer
KW - Lift-off
KW - Porous silicon
UR - http://www.scopus.com/inward/record.url?scp=84898723840&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.365
DO - 10.1016/j.egypro.2013.07.365
M3 - Conference article
AN - SCOPUS:84898723840
VL - 38
SP - 919
EP - 925
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -