Details
| Original language | English |
|---|---|
| Title of host publication | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
| Pages | 1732-1735 |
| Number of pages | 4 |
| ISBN (electronic) | 9781424429509 |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 Conference number: 34 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
The carrier lifetimes in screen-printed Al-p+ regions are shown to be 3 orders of magnitude larger than the values expected from the extrapolation of the lifetime data measured on Al-doped Czochralski-grown silicon wafers. Device simulations show that the lifetime of 130 ns measured in Al-p+ regions enable open-circuit voltages of 670 mV and efficiencies of 21% on n-type silicon wafers. These results prove that the efficiency potential of screen-printed Al-p+ emitters for the application to rear-junction n-type cells is much higher than traditionally assumed.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1732-1735 5411443 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Lifetimes in aluminum-doped silicon
AU - Schmidt, Jan
AU - Thiemann, Nils
AU - Bock, Robert
AU - Brendel, Rolf
N1 - Conference code: 34
PY - 2009
Y1 - 2009
N2 - The carrier lifetimes in screen-printed Al-p+ regions are shown to be 3 orders of magnitude larger than the values expected from the extrapolation of the lifetime data measured on Al-doped Czochralski-grown silicon wafers. Device simulations show that the lifetime of 130 ns measured in Al-p+ regions enable open-circuit voltages of 670 mV and efficiencies of 21% on n-type silicon wafers. These results prove that the efficiency potential of screen-printed Al-p+ emitters for the application to rear-junction n-type cells is much higher than traditionally assumed.
AB - The carrier lifetimes in screen-printed Al-p+ regions are shown to be 3 orders of magnitude larger than the values expected from the extrapolation of the lifetime data measured on Al-doped Czochralski-grown silicon wafers. Device simulations show that the lifetime of 130 ns measured in Al-p+ regions enable open-circuit voltages of 670 mV and efficiencies of 21% on n-type silicon wafers. These results prove that the efficiency potential of screen-printed Al-p+ emitters for the application to rear-junction n-type cells is much higher than traditionally assumed.
UR - http://www.scopus.com/inward/record.url?scp=77951527970&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2009.5411443
DO - 10.1109/PVSC.2009.5411443
M3 - Conference contribution
AN - SCOPUS:77951527970
SN - 978-1-4244-2949-3
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1732
EP - 1735
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Y2 - 7 June 2009 through 12 June 2009
ER -