Details
| Original language | English |
|---|---|
| Article number | 063515 |
| Journal | Journal of applied physics |
| Volume | 110 |
| Issue number | 6 |
| Publication status | Published - 15 Sept 2011 |
| Externally published | Yes |
Abstract
Degradation of minority carrier lifetime under illumination occurs in boron-containing Czochralski silicon of both p- and n-type. In n-Si, the recombination centre responsible for degradation is found to be identical to the fast-stage centre (FRC) known for p-Si, where it is produced at a rate proportional to the squared hole concentration, p2. Holes in n-Si are the excess minority carriers-of a relatively low concentration; hence, the time scale of FRC generation is increased by several orders of magnitude when compared to p-Si. The degradation kinetics, which is non-linear, due to dependence of p on the current concentration of FRC, is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (- 1, 0, 1) possessing 2 energy levels. Comparison of n-Si samples of various electron concentrations shows that FRC emerges by the reconstruction of a latent BsO2 complex of a substitutional boron and an oxygen dimer (while the major recombination centre in p-Si denoted SRC was previously found to emerge by reconstruction of B iO2 defect involving an interstitial boron atom). A model of the BsO2 reconfiguration into FRC through an intermediate state accounts for the rate constant dependence on p, which is reduced to a p2 proportionality, under certain conditions.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 110, No. 6, 063515, 15.09.2011.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon
AU - Voronkov, V. V.
AU - Falster, R.
AU - Bothe, K.
AU - Lim, B.
AU - Schmidt, J.
PY - 2011/9/15
Y1 - 2011/9/15
N2 - Degradation of minority carrier lifetime under illumination occurs in boron-containing Czochralski silicon of both p- and n-type. In n-Si, the recombination centre responsible for degradation is found to be identical to the fast-stage centre (FRC) known for p-Si, where it is produced at a rate proportional to the squared hole concentration, p2. Holes in n-Si are the excess minority carriers-of a relatively low concentration; hence, the time scale of FRC generation is increased by several orders of magnitude when compared to p-Si. The degradation kinetics, which is non-linear, due to dependence of p on the current concentration of FRC, is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (- 1, 0, 1) possessing 2 energy levels. Comparison of n-Si samples of various electron concentrations shows that FRC emerges by the reconstruction of a latent BsO2 complex of a substitutional boron and an oxygen dimer (while the major recombination centre in p-Si denoted SRC was previously found to emerge by reconstruction of B iO2 defect involving an interstitial boron atom). A model of the BsO2 reconfiguration into FRC through an intermediate state accounts for the rate constant dependence on p, which is reduced to a p2 proportionality, under certain conditions.
AB - Degradation of minority carrier lifetime under illumination occurs in boron-containing Czochralski silicon of both p- and n-type. In n-Si, the recombination centre responsible for degradation is found to be identical to the fast-stage centre (FRC) known for p-Si, where it is produced at a rate proportional to the squared hole concentration, p2. Holes in n-Si are the excess minority carriers-of a relatively low concentration; hence, the time scale of FRC generation is increased by several orders of magnitude when compared to p-Si. The degradation kinetics, which is non-linear, due to dependence of p on the current concentration of FRC, is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (- 1, 0, 1) possessing 2 energy levels. Comparison of n-Si samples of various electron concentrations shows that FRC emerges by the reconstruction of a latent BsO2 complex of a substitutional boron and an oxygen dimer (while the major recombination centre in p-Si denoted SRC was previously found to emerge by reconstruction of B iO2 defect involving an interstitial boron atom). A model of the BsO2 reconfiguration into FRC through an intermediate state accounts for the rate constant dependence on p, which is reduced to a p2 proportionality, under certain conditions.
UR - http://www.scopus.com/inward/record.url?scp=80053499545&partnerID=8YFLogxK
U2 - 10.1063/1.3609069
DO - 10.1063/1.3609069
M3 - Article
AN - SCOPUS:80053499545
VL - 110
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 6
M1 - 063515
ER -