Details
| Original language | English |
|---|---|
| Pages (from-to) | 46-50 |
| Number of pages | 5 |
| Journal | Energy Procedia |
| Volume | 3 |
| Publication status | Published - 2011 |
| Externally published | Yes |
Abstract
The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Energy Procedia, Vol. 3, 2011, p. 46-50.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Lifetime degradation mechanism in boron-doped Czochralski silicon
AU - Voronkov, V. V.
AU - Falster, R.
AU - Batunina, A. V.
AU - MacDonald, D.
AU - Bothe, K.
AU - Schmidt, J.
PY - 2011
Y1 - 2011
N2 - The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
AB - The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
KW - Boron
KW - Electron lifetime
KW - Oxygen
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=79952748274&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.01.008
DO - 10.1016/j.egypro.2011.01.008
M3 - Article
AN - SCOPUS:79952748274
VL - 3
SP - 46
EP - 50
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -