Details
| Original language | English |
|---|---|
| Title of host publication | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
| Editors | Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron |
| Publication status | Published - 10 Aug 2018 |
| Event | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1999 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
We examine the lifetime degradation in multicrystalline silicon (mc-Si) under illumination at elevated temperature, an effect frequently denoted as 'LeTID' ('Light and elevated Temperature Induced Degradation'). Our lifetime analysis of belt-furnace-fired high-performance mc-Si wafers shows that LeTID is most pronounced on samples with Al2O3/SiNx-stack passivation. In contrast to that, the degradation on samples coated with Al2O3 single-layers is very small. We identify the presence of SiNx to be a key component to trigger the defect activation process. Our measurements suggest that hydrogen released during the high-temperature firing from the hydrogen-rich PECVD-deposited SiNx into the silicon bulk plays a major role in the defect activation process. Additionally, we find that the magnitude of lifetime degradation increases exponentially with increasing peak temperature during fast-firing. Comparing these results with recently published results from the literature, we conclude that hydrogen-metal complexes are possible candidates for the root cause of LeTID.
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SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Jef Poortmans; Arthur Weeber; Giso Hahn; Christophe Ballif; Stefan Glunz; Pierre-Jean Ribeyron. 2018. 130001 (AIP Conference Proceedings; Vol. 1999).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Lifetime degradation in multicrystalline silicon under illumination at elevated temperature
T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
AU - Bredemeier, Dennis
AU - Walter, Dominic C.
AU - Schmidt, Jan
N1 - Funding Information: The authors thank C. Marquardt for sample processing. This work was funded by the German State of Lower Saxony and the German Federal Ministry of Economics and Energy and by industry partners within the research project ‘LIMES’ (Contract no. 0324204D). The content is the responsibility of the authors.
PY - 2018/8/10
Y1 - 2018/8/10
N2 - We examine the lifetime degradation in multicrystalline silicon (mc-Si) under illumination at elevated temperature, an effect frequently denoted as 'LeTID' ('Light and elevated Temperature Induced Degradation'). Our lifetime analysis of belt-furnace-fired high-performance mc-Si wafers shows that LeTID is most pronounced on samples with Al2O3/SiNx-stack passivation. In contrast to that, the degradation on samples coated with Al2O3 single-layers is very small. We identify the presence of SiNx to be a key component to trigger the defect activation process. Our measurements suggest that hydrogen released during the high-temperature firing from the hydrogen-rich PECVD-deposited SiNx into the silicon bulk plays a major role in the defect activation process. Additionally, we find that the magnitude of lifetime degradation increases exponentially with increasing peak temperature during fast-firing. Comparing these results with recently published results from the literature, we conclude that hydrogen-metal complexes are possible candidates for the root cause of LeTID.
AB - We examine the lifetime degradation in multicrystalline silicon (mc-Si) under illumination at elevated temperature, an effect frequently denoted as 'LeTID' ('Light and elevated Temperature Induced Degradation'). Our lifetime analysis of belt-furnace-fired high-performance mc-Si wafers shows that LeTID is most pronounced on samples with Al2O3/SiNx-stack passivation. In contrast to that, the degradation on samples coated with Al2O3 single-layers is very small. We identify the presence of SiNx to be a key component to trigger the defect activation process. Our measurements suggest that hydrogen released during the high-temperature firing from the hydrogen-rich PECVD-deposited SiNx into the silicon bulk plays a major role in the defect activation process. Additionally, we find that the magnitude of lifetime degradation increases exponentially with increasing peak temperature during fast-firing. Comparing these results with recently published results from the literature, we conclude that hydrogen-metal complexes are possible candidates for the root cause of LeTID.
UR - http://www.scopus.com/inward/record.url?scp=85051928486&partnerID=8YFLogxK
U2 - 10.1063/1.5049320
DO - 10.1063/1.5049320
M3 - Conference contribution
AN - SCOPUS:85051928486
SN - 9780735417151
T3 - AIP Conference Proceedings
BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Poortmans, Jef
A2 - Weeber, Arthur
A2 - Hahn, Giso
A2 - Ballif, Christophe
A2 - Glunz, Stefan
A2 - Ribeyron, Pierre-Jean
Y2 - 19 March 2018 through 21 March 2018
ER -