Level anticrossings in quantum dots

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • J. Könemann
  • E. Räsänen
  • M. J. Puska
  • R. M. Nieminen
  • R. J. Haug

Research Organisations

External Research Organisations

  • Aalto University
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Details

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages809-810
Number of pages2
Publication statusPublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

We have studied the single-electron transport spectrum of a localized level embedded into a double-barrier resonant tunneling structure. The experimental spectrum shows clear deviations from the Fock-Darwin model indicating a broken circular symmetry. We interprete our observations in terms of the existence of an additional multiple-charged impurity in the vicinity of the quantum dot.

ASJC Scopus subject areas

Cite this

Level anticrossings in quantum dots. / Könemann, J.; Räsänen, E.; Puska, M. J. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 809-810 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Könemann, J, Räsänen, E, Puska, MJ, Nieminen, RM & Haug, RJ 2005, Level anticrossings in quantum dots. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 809-810, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26 Jul 2004. https://doi.org/10.1063/1.1994353
Könemann, J., Räsänen, E., Puska, M. J., Nieminen, R. M., & Haug, R. J. (2005). Level anticrossings in quantum dots. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 809-810). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994353
Könemann J, Räsänen E, Puska MJ, Nieminen RM, Haug RJ. Level anticrossings in quantum dots. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 809-810. (AIP Conference Proceedings). doi: 10.1063/1.1994353
Könemann, J. ; Räsänen, E. ; Puska, M. J. et al. / Level anticrossings in quantum dots. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 809-810 (AIP Conference Proceedings).
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