Layer selective laser ablation for local contacts to thin emitters

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Felix Haase
  • Enrique Garralaga Rojas
  • Karsten Bothe
  • Rolf Brendel

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Pages (from-to)577-580
Number of pages4
JournalEnergy Procedia
Volume8
Early online date12 Aug 2011
Publication statusPublished - 2011

Abstract

High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should be contacted locally in order to avoid excessive contact recombination. This is common practice for front junction solar cells but is also advantageous for back junction cells. We analyze a novel layer selective laser ablation process. From a passivating stack composed of 70 nm silicon nitride that we deposit on top of 35 nm of amorphous silicon we selectively ablate the silicon nitride layer. Transmission electron microscopy investigations confirm the full ablation of the silicon nitride layer. After the ablation process, a 17 nm-thick amorphous silicon layer remains on the substrate. The crystalline silicon substrate shows no dislocations after the process. Evaporating aluminum on top of the locally ablated nitride layers forms local contacts of the aluminum to the silicon.

Keywords

    Amorphous silicon passivation, Local contact openings, Selective laser ablation, Thin back junction emitter

ASJC Scopus subject areas

Cite this

Layer selective laser ablation for local contacts to thin emitters. / Haase, Felix; Rojas, Enrique Garralaga; Bothe, Karsten et al.
In: Energy Procedia, Vol. 8, 2011, p. 577-580.

Research output: Contribution to journalArticleResearchpeer review

Haase, F, Rojas, EG, Bothe, K & Brendel, R 2011, 'Layer selective laser ablation for local contacts to thin emitters', Energy Procedia, vol. 8, pp. 577-580. https://doi.org/10.1016/j.egypro.2011.06.185, https://doi.org/10.15488/1154
Haase F, Rojas EG, Bothe K, Brendel R. Layer selective laser ablation for local contacts to thin emitters. Energy Procedia. 2011;8:577-580. Epub 2011 Aug 12. doi: 10.1016/j.egypro.2011.06.185, 10.15488/1154
Haase, Felix ; Rojas, Enrique Garralaga ; Bothe, Karsten et al. / Layer selective laser ablation for local contacts to thin emitters. In: Energy Procedia. 2011 ; Vol. 8. pp. 577-580.
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AU - Haase, Felix

AU - Rojas, Enrique Garralaga

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AU - Brendel, Rolf

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