Details
| Original language | English |
|---|---|
| Pages (from-to) | 577-580 |
| Number of pages | 4 |
| Journal | Energy Procedia |
| Volume | 8 |
| Early online date | 12 Aug 2011 |
| Publication status | Published - 2011 |
Abstract
High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should be contacted locally in order to avoid excessive contact recombination. This is common practice for front junction solar cells but is also advantageous for back junction cells. We analyze a novel layer selective laser ablation process. From a passivating stack composed of 70 nm silicon nitride that we deposit on top of 35 nm of amorphous silicon we selectively ablate the silicon nitride layer. Transmission electron microscopy investigations confirm the full ablation of the silicon nitride layer. After the ablation process, a 17 nm-thick amorphous silicon layer remains on the substrate. The crystalline silicon substrate shows no dislocations after the process. Evaporating aluminum on top of the locally ablated nitride layers forms local contacts of the aluminum to the silicon.
Keywords
- Amorphous silicon passivation, Local contact openings, Selective laser ablation, Thin back junction emitter
ASJC Scopus subject areas
- Energy(all)
- General Energy
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Energy Procedia, Vol. 8, 2011, p. 577-580.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Layer selective laser ablation for local contacts to thin emitters
AU - Haase, Felix
AU - Rojas, Enrique Garralaga
AU - Bothe, Karsten
AU - Brendel, Rolf
PY - 2011
Y1 - 2011
N2 - High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should be contacted locally in order to avoid excessive contact recombination. This is common practice for front junction solar cells but is also advantageous for back junction cells. We analyze a novel layer selective laser ablation process. From a passivating stack composed of 70 nm silicon nitride that we deposit on top of 35 nm of amorphous silicon we selectively ablate the silicon nitride layer. Transmission electron microscopy investigations confirm the full ablation of the silicon nitride layer. After the ablation process, a 17 nm-thick amorphous silicon layer remains on the substrate. The crystalline silicon substrate shows no dislocations after the process. Evaporating aluminum on top of the locally ablated nitride layers forms local contacts of the aluminum to the silicon.
AB - High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should be contacted locally in order to avoid excessive contact recombination. This is common practice for front junction solar cells but is also advantageous for back junction cells. We analyze a novel layer selective laser ablation process. From a passivating stack composed of 70 nm silicon nitride that we deposit on top of 35 nm of amorphous silicon we selectively ablate the silicon nitride layer. Transmission electron microscopy investigations confirm the full ablation of the silicon nitride layer. After the ablation process, a 17 nm-thick amorphous silicon layer remains on the substrate. The crystalline silicon substrate shows no dislocations after the process. Evaporating aluminum on top of the locally ablated nitride layers forms local contacts of the aluminum to the silicon.
KW - Amorphous silicon passivation
KW - Local contact openings
KW - Selective laser ablation
KW - Thin back junction emitter
UR - http://www.scopus.com/inward/record.url?scp=80052080642&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.185
DO - 10.1016/j.egypro.2011.06.185
M3 - Article
AN - SCOPUS:80052080642
VL - 8
SP - 577
EP - 580
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -