Details
| Original language | English |
|---|---|
| Pages (from-to) | 246-252 |
| Number of pages | 7 |
| Journal | Journal of crystal growth |
| Volume | 135 |
| Issue number | 1-2 |
| Publication status | Published - Jan 1994 |
| Externally published | Yes |
Abstract
Boron segregation from submonolayer (less than 0.1 monolayer) interfacial boron deposition during thin film silicon growth with molecular beam epitaxy (MBE) in the temperature range 450 to 800°C has been investigated by secondary ion mass spectrometry (SIMS) with high depth resolution abd lateral resolution of a few micrometer. Beginning at 600°C, segregation-induced "kinks" occur in the boron profiles developing into shoulders for higher growth temperatures and/or lower deposition rates. At temperatures above 700°C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. Interfacial carbon showing significantly less segregation has been used as a marker. Laterally resolved SIMS measurements indicate inhomogeneous boron distribution, mainly due to residual substrate contamination. These inhomogeneities strongly influence the segregation behaviour, as shown by SIMS cross-section analysis, and can result in local boron penetration through multilayer structures, demonstrating the importance of appropriate cleaning procedures for residual boron substrate contamination.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 135, No. 1-2, 01.1994, p. 246-252.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy
AU - Krüger, D.
AU - Lippert, G.
AU - Kurps, R.
AU - Osten, H. J.
PY - 1994/1
Y1 - 1994/1
N2 - Boron segregation from submonolayer (less than 0.1 monolayer) interfacial boron deposition during thin film silicon growth with molecular beam epitaxy (MBE) in the temperature range 450 to 800°C has been investigated by secondary ion mass spectrometry (SIMS) with high depth resolution abd lateral resolution of a few micrometer. Beginning at 600°C, segregation-induced "kinks" occur in the boron profiles developing into shoulders for higher growth temperatures and/or lower deposition rates. At temperatures above 700°C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. Interfacial carbon showing significantly less segregation has been used as a marker. Laterally resolved SIMS measurements indicate inhomogeneous boron distribution, mainly due to residual substrate contamination. These inhomogeneities strongly influence the segregation behaviour, as shown by SIMS cross-section analysis, and can result in local boron penetration through multilayer structures, demonstrating the importance of appropriate cleaning procedures for residual boron substrate contamination.
AB - Boron segregation from submonolayer (less than 0.1 monolayer) interfacial boron deposition during thin film silicon growth with molecular beam epitaxy (MBE) in the temperature range 450 to 800°C has been investigated by secondary ion mass spectrometry (SIMS) with high depth resolution abd lateral resolution of a few micrometer. Beginning at 600°C, segregation-induced "kinks" occur in the boron profiles developing into shoulders for higher growth temperatures and/or lower deposition rates. At temperatures above 700°C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. Interfacial carbon showing significantly less segregation has been used as a marker. Laterally resolved SIMS measurements indicate inhomogeneous boron distribution, mainly due to residual substrate contamination. These inhomogeneities strongly influence the segregation behaviour, as shown by SIMS cross-section analysis, and can result in local boron penetration through multilayer structures, demonstrating the importance of appropriate cleaning procedures for residual boron substrate contamination.
UR - http://www.scopus.com/inward/record.url?scp=0028194228&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90747-1
DO - 10.1016/0022-0248(94)90747-1
M3 - Article
AN - SCOPUS:0028194228
VL - 135
SP - 246
EP - 252
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-2
ER -