Details
| Original language | English |
|---|---|
| Title of host publication | LAT 2010 |
| Subtitle of host publication | International Conference on Lasers, Applications, and Technologies |
| Publication status | Published - 7 Feb 2011 |
| Externally published | Yes |
| Event | LAT 2010: International Conference on Lasers, Applications, and Technologies - Kazan, Russian Federation Duration: 23 Aug 2010 → 26 Aug 2010 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7994 |
| ISSN (Print) | 0277-786X |
Abstract
Treatments by femtosecond Ti-sapphire laser (wavelength is 800 nm, pulse duration is <30 fs) and nanosecond KrF excimer laser (wavelength is 248 nm, pulse duration is 25 ns) were performed to study the impact of laser fluence, pulse duration and energy of photons on the process of chemical and structural reconstructions in GeOx and GeO2:Ge heterolayers. The solid GeOx films are metastable and decompose into two phases - Ge and GeO2. Nanosecond KrF laser irradiation produces significant shrinkage of GeOx films and GeO2:Ge heterolayers caped by thin SiNxOy or SiO2 films. Pulse annealing by both types of lasers stimulate as the process of nanoclusters forming and crystallization of initial amorphous Ge-nanoclusters in the GeO2 matrix. The possibility to use the solid germanium monoxide (GeO(s)) and GeO2:Ge heterolayers (without cap layers) as nano-resist in laser nanolithography was demonstrated. The new nanostructured material was formed - the layers of nanofoam GeO2 which can be obtained only with application of femtosecond laser pulse treatments.
Keywords
- Femto-and nanosecond laser modification, Ge-nanoclusters in GeO, Nano-foam
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
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LAT 2010: International Conference on Lasers, Applications, and Technologies. 2011. 79940W (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7994).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Laser treatment of the heterolayers "GeO2:Ge-QDs"
AU - Gorokhov, E. B.
AU - Volodin, V. A.
AU - Kuznetsov, A. I.
AU - Chichkov, B. N.
AU - Astankova, K. N.
AU - Azarov, I. A.
PY - 2011/2/7
Y1 - 2011/2/7
N2 - Treatments by femtosecond Ti-sapphire laser (wavelength is 800 nm, pulse duration is <30 fs) and nanosecond KrF excimer laser (wavelength is 248 nm, pulse duration is 25 ns) were performed to study the impact of laser fluence, pulse duration and energy of photons on the process of chemical and structural reconstructions in GeOx and GeO2:Ge heterolayers. The solid GeOx films are metastable and decompose into two phases - Ge and GeO2. Nanosecond KrF laser irradiation produces significant shrinkage of GeOx films and GeO2:Ge heterolayers caped by thin SiNxOy or SiO2 films. Pulse annealing by both types of lasers stimulate as the process of nanoclusters forming and crystallization of initial amorphous Ge-nanoclusters in the GeO2 matrix. The possibility to use the solid germanium monoxide (GeO(s)) and GeO2:Ge heterolayers (without cap layers) as nano-resist in laser nanolithography was demonstrated. The new nanostructured material was formed - the layers of nanofoam GeO2 which can be obtained only with application of femtosecond laser pulse treatments.
AB - Treatments by femtosecond Ti-sapphire laser (wavelength is 800 nm, pulse duration is <30 fs) and nanosecond KrF excimer laser (wavelength is 248 nm, pulse duration is 25 ns) were performed to study the impact of laser fluence, pulse duration and energy of photons on the process of chemical and structural reconstructions in GeOx and GeO2:Ge heterolayers. The solid GeOx films are metastable and decompose into two phases - Ge and GeO2. Nanosecond KrF laser irradiation produces significant shrinkage of GeOx films and GeO2:Ge heterolayers caped by thin SiNxOy or SiO2 films. Pulse annealing by both types of lasers stimulate as the process of nanoclusters forming and crystallization of initial amorphous Ge-nanoclusters in the GeO2 matrix. The possibility to use the solid germanium monoxide (GeO(s)) and GeO2:Ge heterolayers (without cap layers) as nano-resist in laser nanolithography was demonstrated. The new nanostructured material was formed - the layers of nanofoam GeO2 which can be obtained only with application of femtosecond laser pulse treatments.
KW - Femto-and nanosecond laser modification
KW - Ge-nanoclusters in GeO
KW - Nano-foam
UR - http://www.scopus.com/inward/record.url?scp=79952634360&partnerID=8YFLogxK
U2 - 10.1117/12.882043
DO - 10.1117/12.882043
M3 - Conference contribution
AN - SCOPUS:79952634360
SN - 9780819485670
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - LAT 2010
T2 - LAT 2010: International Conference on Lasers, Applications, and Technologies
Y2 - 23 August 2010 through 26 August 2010
ER -