Details
| Original language | English |
|---|---|
| Pages (from-to) | 1964-1966 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 208 |
| Issue number | 8 |
| Early online date | 29 Mar 2011 |
| Publication status | Published - 10 Aug 2011 |
Abstract
We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus-doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ this process for producing local high-low junctions for the formation of n +-n back surface field layers that are contacted with Al. The contact's surface recombination velocities and the contact resistances depend on the laser processing and annealing conditions. They range from S cont = 20 to 1500 cm s -1 and from R cont = 1 to 1000 mω cm 2, respectively. The combination of acceptable contact resistance and low recombination velocities makes the LTD technique suitable for the formation of the rear contacts of n-type high-efficiency solar cells. The simplicity of the process makes it a candidate for industrial production.
Keywords
- amorphous silicon, contacts, laser doping, transfer
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 208, No. 8, 10.08.2011, p. 1964-1966.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Laser transfer doping for contacting n-type crystalline Si solar cells
AU - Ferré, Rafel
AU - Gogolin, Ralf
AU - Müller, Jens
AU - Harder, Nils Peter
AU - Brendel, Rolf
PY - 2011/8/10
Y1 - 2011/8/10
N2 - We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus-doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ this process for producing local high-low junctions for the formation of n +-n back surface field layers that are contacted with Al. The contact's surface recombination velocities and the contact resistances depend on the laser processing and annealing conditions. They range from S cont = 20 to 1500 cm s -1 and from R cont = 1 to 1000 mω cm 2, respectively. The combination of acceptable contact resistance and low recombination velocities makes the LTD technique suitable for the formation of the rear contacts of n-type high-efficiency solar cells. The simplicity of the process makes it a candidate for industrial production.
AB - We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus-doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ this process for producing local high-low junctions for the formation of n +-n back surface field layers that are contacted with Al. The contact's surface recombination velocities and the contact resistances depend on the laser processing and annealing conditions. They range from S cont = 20 to 1500 cm s -1 and from R cont = 1 to 1000 mω cm 2, respectively. The combination of acceptable contact resistance and low recombination velocities makes the LTD technique suitable for the formation of the rear contacts of n-type high-efficiency solar cells. The simplicity of the process makes it a candidate for industrial production.
KW - amorphous silicon
KW - contacts
KW - laser doping
KW - transfer
UR - http://www.scopus.com/inward/record.url?scp=80051678194&partnerID=8YFLogxK
U2 - 10.1002/pssa.201127046
DO - 10.1002/pssa.201127046
M3 - Article
AN - SCOPUS:80051678194
VL - 208
SP - 1964
EP - 1966
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 8
ER -