Laser threshold reduction in a spintronic device

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Original languageEnglish
Pages (from-to)4516-4518
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number25
Publication statusPublished - 16 Jun 2003

Abstract

The laser threshold reduction in a spintronic device was discussed. A reduction of the threshold of a semiconductor laser by optically pumping spin-polarized electrons in the gain medium was elaborated. The analysis showed that the polarized electrons coupled selectively to one of two possible lasing light modes which effectively reduced the threshold up to 50% compared to conventional pumping with unpolarized electrons.

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Laser threshold reduction in a spintronic device. / Rudolph, Jörg; Hägele, Daniel; Gibbs, H. M. et al.
In: Applied Physics Letters, Vol. 82, No. 25, 16.06.2003, p. 4516-4518.

Research output: Contribution to journalArticleResearchpeer review

Rudolph, J, Hägele, D, Gibbs, HM, Khitrova, G & Oestreich, M 2003, 'Laser threshold reduction in a spintronic device', Applied Physics Letters, vol. 82, no. 25, pp. 4516-4518. https://doi.org/10.1063/1.1583145
Rudolph, J., Hägele, D., Gibbs, H. M., Khitrova, G., & Oestreich, M. (2003). Laser threshold reduction in a spintronic device. Applied Physics Letters, 82(25), 4516-4518. https://doi.org/10.1063/1.1583145
Rudolph J, Hägele D, Gibbs HM, Khitrova G, Oestreich M. Laser threshold reduction in a spintronic device. Applied Physics Letters. 2003 Jun 16;82(25):4516-4518. doi: 10.1063/1.1583145
Rudolph, Jörg ; Hägele, Daniel ; Gibbs, H. M. et al. / Laser threshold reduction in a spintronic device. In: Applied Physics Letters. 2003 ; Vol. 82, No. 25. pp. 4516-4518.
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