Details
| Original language | English |
|---|---|
| Pages (from-to) | 237-243 |
| Number of pages | 7 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 15 |
| Issue number | 3 |
| Early online date | 5 Oct 2006 |
| Publication status | Published - May 2007 |
| Externally published | Yes |
Abstract
We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.
Keywords
- Back contact, Back junction, High efficiency, Laser technology, Rear interdigitated, RISE, Silicon solar cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 15, No. 3, 05.2007, p. 237-243.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Laser structuring for back junction silicon solar cells
AU - Engelhart, Peter
AU - Harder, Nils Peter
AU - Grischke, Rainer
AU - Merkle, Agnes
AU - Meyer, Rüdiger
AU - Brendel, Rolf
N1 - Funding Information: The financial support by the State of Lower Saxony and the German FederalGovernment is gratefully acknowledged. The ISFH is a member of the Forschungsverbund Sonnenenergie.
PY - 2007/5
Y1 - 2007/5
N2 - We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.
AB - We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.
KW - Back contact
KW - Back junction
KW - High efficiency
KW - Laser technology
KW - Rear interdigitated
KW - RISE
KW - Silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=34247142898&partnerID=8YFLogxK
U2 - 10.1002/pip.732
DO - 10.1002/pip.732
M3 - Article
AN - SCOPUS:34247142898
VL - 15
SP - 237
EP - 243
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 3
ER -