Details
| Original language | English |
|---|---|
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | ICALEO 2006 - 25th International Congress on Applications of Laser and Electro-Optics - Scottsdale, AZ, United States Duration: 30 Oct 2006 → 2 Nov 2006 |
Conference
| Conference | ICALEO 2006 - 25th International Congress on Applications of Laser and Electro-Optics |
|---|---|
| Country/Territory | United States |
| City | Scottsdale, AZ |
| Period | 30 Oct 2006 → 2 Nov 2006 |
Abstract
We use laser ablation of Si and laser ablation of organic coatings on Si wafers for locally processing solar cells. We present experimental investigations of a variety of pulsed lasers, such as Nd:YAG laser and frequency-converted solid state lasers concerning their applicability of laser structuring silicon solar cells. The laser-induced Si crystal damage is investigated by means of contact-less minority carrier lifetime measurements. With our optimized laser parameters for structuring monocristalline Si we find the depth of the laser-induced damage to be 3 μm for the frequency-tripled (λ = 355 nm), 4 μm for the frequency-doubled (λ = 532 nm), and above 20 μm for the Nd:YAG (λ = 1064 nm) laser. One-dimensional simulation results show the influence of a lowered minority carrier lifetime in the silicon absorber on the performance of a back junction solar cell. With an optimized laser process we fabricate solar cells with a Rear Interdigitated contact scheme that is metallized by one Single vacuum Evaporation step (RISE). The so-called RISE process aims at highest efficiencies in combination with low process complexity.
ASJC Scopus subject areas
- Earth and Planetary Sciences(all)
- Geochemistry and Petrology
- Engineering(all)
- Electrical and Electronic Engineering
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2006. Paper presented at ICALEO 2006 - 25th International Congress on Applications of Laser and Electro-Optics, Scottsdale, AZ, United States.
Research output: Contribution to conference › Paper › Research › peer review
}
TY - CONF
T1 - Laser processing for back-contacted silicon solar cells
AU - Engelhart, P.
AU - Grischke, R.
AU - Eidelloth, S.
AU - Meyer, R.
AU - Schoonderbeek, A.
AU - Stute, U.
AU - Ostendorf, A.
AU - Brendel, R.
N1 - Funding Information: Part of this work was supported by the State of Lower Saxony/Germany, which we gratefully acknowledge.
PY - 2006
Y1 - 2006
N2 - We use laser ablation of Si and laser ablation of organic coatings on Si wafers for locally processing solar cells. We present experimental investigations of a variety of pulsed lasers, such as Nd:YAG laser and frequency-converted solid state lasers concerning their applicability of laser structuring silicon solar cells. The laser-induced Si crystal damage is investigated by means of contact-less minority carrier lifetime measurements. With our optimized laser parameters for structuring monocristalline Si we find the depth of the laser-induced damage to be 3 μm for the frequency-tripled (λ = 355 nm), 4 μm for the frequency-doubled (λ = 532 nm), and above 20 μm for the Nd:YAG (λ = 1064 nm) laser. One-dimensional simulation results show the influence of a lowered minority carrier lifetime in the silicon absorber on the performance of a back junction solar cell. With an optimized laser process we fabricate solar cells with a Rear Interdigitated contact scheme that is metallized by one Single vacuum Evaporation step (RISE). The so-called RISE process aims at highest efficiencies in combination with low process complexity.
AB - We use laser ablation of Si and laser ablation of organic coatings on Si wafers for locally processing solar cells. We present experimental investigations of a variety of pulsed lasers, such as Nd:YAG laser and frequency-converted solid state lasers concerning their applicability of laser structuring silicon solar cells. The laser-induced Si crystal damage is investigated by means of contact-less minority carrier lifetime measurements. With our optimized laser parameters for structuring monocristalline Si we find the depth of the laser-induced damage to be 3 μm for the frequency-tripled (λ = 355 nm), 4 μm for the frequency-doubled (λ = 532 nm), and above 20 μm for the Nd:YAG (λ = 1064 nm) laser. One-dimensional simulation results show the influence of a lowered minority carrier lifetime in the silicon absorber on the performance of a back junction solar cell. With an optimized laser process we fabricate solar cells with a Rear Interdigitated contact scheme that is metallized by one Single vacuum Evaporation step (RISE). The so-called RISE process aims at highest efficiencies in combination with low process complexity.
UR - http://www.scopus.com/inward/record.url?scp=56749133197&partnerID=8YFLogxK
U2 - 10.2351/1.5060906
DO - 10.2351/1.5060906
M3 - Paper
AN - SCOPUS:56749133197
T2 - ICALEO 2006 - 25th International Congress on Applications of Laser and Electro-Optics
Y2 - 30 October 2006 through 2 November 2006
ER -