Details
| Original language | English |
|---|---|
| Pages (from-to) | 521-527 |
| Number of pages | 7 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 15 |
| Issue number | 6 |
| Early online date | 27 Mar 2007 |
| Publication status | Published - Sept 2007 |
Abstract
We apply ultra-short pulse laser ablation to create local contact openings in thermally grown passivating SiO2 layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τpulse ∼ 10ps. The specific contact resistance that we reach with evaporated aluminium on a 100Ω/sq and P-dijfused emitter is in the range of 0-3-1 mΩ cm2. Ultra-short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J0e= (6·2 ±1·6) × 10-13 A/cm2 on the laser-treated areas after a selective emitter diffusion with Rsheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO 2 layer removed by HF-etching. Thus, laser ablation of dielectrics with pulse durations of about 10ps is well suited to fabricate high-efficiency Si solar cells.
Keywords
- Laser ablation, Laser technology, Si solar cells, Ultra-short pulse laser
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Progress in Photovoltaics: Research and Applications, Vol. 15, No. 6, 09.2007, p. 521-527.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses
AU - Engelhart, Peter
AU - Hermann, Sonja
AU - Neubert, Tobias
AU - Plagwitz, Heiko
AU - Grischke, Rainer
AU - Meyer, Rüdiger
AU - Klug, Ulrich
AU - Schoonderbeek, Aart
AU - Stute, Uwe
AU - Brendel, Rolf
N1 - Funding Information: The financial support by the State of Lower Saxony is gratefully acknowledged. We gratefully acknowledgefruitful discussions with Bernhard Fischer. The ISFH is a member of theForschungsverbund Sonnenenergie e.V
PY - 2007/9
Y1 - 2007/9
N2 - We apply ultra-short pulse laser ablation to create local contact openings in thermally grown passivating SiO2 layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τpulse ∼ 10ps. The specific contact resistance that we reach with evaporated aluminium on a 100Ω/sq and P-dijfused emitter is in the range of 0-3-1 mΩ cm2. Ultra-short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J0e= (6·2 ±1·6) × 10-13 A/cm2 on the laser-treated areas after a selective emitter diffusion with Rsheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO 2 layer removed by HF-etching. Thus, laser ablation of dielectrics with pulse durations of about 10ps is well suited to fabricate high-efficiency Si solar cells.
AB - We apply ultra-short pulse laser ablation to create local contact openings in thermally grown passivating SiO2 layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τpulse ∼ 10ps. The specific contact resistance that we reach with evaporated aluminium on a 100Ω/sq and P-dijfused emitter is in the range of 0-3-1 mΩ cm2. Ultra-short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J0e= (6·2 ±1·6) × 10-13 A/cm2 on the laser-treated areas after a selective emitter diffusion with Rsheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO 2 layer removed by HF-etching. Thus, laser ablation of dielectrics with pulse durations of about 10ps is well suited to fabricate high-efficiency Si solar cells.
KW - Laser ablation
KW - Laser technology
KW - Si solar cells
KW - Ultra-short pulse laser
UR - http://www.scopus.com/inward/record.url?scp=34548458496&partnerID=8YFLogxK
U2 - 10.1002/pip.758
DO - 10.1002/pip.758
M3 - Article
AN - SCOPUS:34548458496
VL - 15
SP - 521
EP - 527
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 6
ER -