Details
| Original language | English |
|---|---|
| Article number | 1700191 |
| Journal | Solar RRL |
| Volume | 2 |
| Issue number | 3 |
| Publication status | Published - 5 Mar 2018 |
Abstract
A large-area BackPEDOT solar cell with a phosphorus-diffused emitter and a high-temperature-fired screen-printed Ag grid on the front surface and PEDOT:PSS as hole-collecting and passivating layer at the cell rear is developed. As base material, 15.6 × 15.6 cm 2 pseudo-square industrial-type boron-doped p-type Czochralski-grown silicon wafers are used. The set-peak firing temperature (T set) is varied from 850 to 870 °C with a total number of 32 processed solar cells. The optimum T set of 870 °C results in a median solar cell efficiency of 19.0%. The best large-area BackPEDOT solar cell achieves an efficiency of 20.2%. Based on external quantum efficiency measurements, a rear surface recombination velocity S rear < 70 cm s −1 is determined, a value which is on a par with today's industrial high-efficiency solar cells. Furthermore, a low-temperature metal paste is introduced, which is shown to be capable of metalizing the PEDOT:PSS-covered rear surface of the solar cells without damaging the rear surface passivation. The principle feasibility of such a rear metallization scheme is demonstrated. The parasitic absorption of infrared light within the PEDOT:PSS layer is identified as the major loss mechanism in the current cells, which might be overcome in the future by adding infrared-transparent additives to the PEDOT:PSS dispersion.
Keywords
- PEDOT:PSS, large-areas, low-temperature pastes, screen-print, solar cells
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Energy(all)
- Energy Engineering and Power Technology
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solar RRL, Vol. 2, No. 3, 1700191, 05.03.2018.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Large-Area PEDOT:PSS/c-Si Heterojunction Solar Cells With Screen-Printed Metal Contacts
AU - Zielke, Dimitri
AU - Gogolin, Ralf
AU - Halbich, Marc-Uwe
AU - Marquardt, Cornelia
AU - Lövenich, Winfried
AU - Sauer, R.
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/3/5
Y1 - 2018/3/5
N2 - A large-area BackPEDOT solar cell with a phosphorus-diffused emitter and a high-temperature-fired screen-printed Ag grid on the front surface and PEDOT:PSS as hole-collecting and passivating layer at the cell rear is developed. As base material, 15.6 × 15.6 cm 2 pseudo-square industrial-type boron-doped p-type Czochralski-grown silicon wafers are used. The set-peak firing temperature (T set) is varied from 850 to 870 °C with a total number of 32 processed solar cells. The optimum T set of 870 °C results in a median solar cell efficiency of 19.0%. The best large-area BackPEDOT solar cell achieves an efficiency of 20.2%. Based on external quantum efficiency measurements, a rear surface recombination velocity S rear < 70 cm s −1 is determined, a value which is on a par with today's industrial high-efficiency solar cells. Furthermore, a low-temperature metal paste is introduced, which is shown to be capable of metalizing the PEDOT:PSS-covered rear surface of the solar cells without damaging the rear surface passivation. The principle feasibility of such a rear metallization scheme is demonstrated. The parasitic absorption of infrared light within the PEDOT:PSS layer is identified as the major loss mechanism in the current cells, which might be overcome in the future by adding infrared-transparent additives to the PEDOT:PSS dispersion.
AB - A large-area BackPEDOT solar cell with a phosphorus-diffused emitter and a high-temperature-fired screen-printed Ag grid on the front surface and PEDOT:PSS as hole-collecting and passivating layer at the cell rear is developed. As base material, 15.6 × 15.6 cm 2 pseudo-square industrial-type boron-doped p-type Czochralski-grown silicon wafers are used. The set-peak firing temperature (T set) is varied from 850 to 870 °C with a total number of 32 processed solar cells. The optimum T set of 870 °C results in a median solar cell efficiency of 19.0%. The best large-area BackPEDOT solar cell achieves an efficiency of 20.2%. Based on external quantum efficiency measurements, a rear surface recombination velocity S rear < 70 cm s −1 is determined, a value which is on a par with today's industrial high-efficiency solar cells. Furthermore, a low-temperature metal paste is introduced, which is shown to be capable of metalizing the PEDOT:PSS-covered rear surface of the solar cells without damaging the rear surface passivation. The principle feasibility of such a rear metallization scheme is demonstrated. The parasitic absorption of infrared light within the PEDOT:PSS layer is identified as the major loss mechanism in the current cells, which might be overcome in the future by adding infrared-transparent additives to the PEDOT:PSS dispersion.
KW - PEDOT:PSS
KW - large-areas
KW - low-temperature pastes
KW - screen-print
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=85056897494&partnerID=8YFLogxK
U2 - 10.1002/solr.201700191
DO - 10.1002/solr.201700191
M3 - Article
VL - 2
JO - Solar RRL
JF - Solar RRL
IS - 3
M1 - 1700191
ER -