Junction Temperature Estimation of SiC MOSFETs during Inverter Operation Using Switching Times and On-State Voltages

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Daniel Herwig
  • Axel Mertens
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Details

Original languageEnglish
Title of host publication2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2747-2754
Number of pages8
ISBN (electronic)9781728151359
ISBN (print)978-1-7281-6128-0
Publication statusPublished - 2021
Event13th IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Virtual, Online, Canada
Duration: 10 Oct 202114 Oct 2021

Publication series

Name2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings
ISSN (Print)2329-3721
ISSN (electronic)2329-3748

Abstract

Temperature-sensitive electrical parameters (TSEPs) can be used for on-line determination of the junction temperature of semiconductors and as key parameters for degradation detection. Typical TSEPs are on-state voltages and switching times. Measuring these TSEPs of fast switching SiC power modules with high switching frequencies is challenging in terms of circuit design. This work presents TSEP measurement hardware for SiC modules capable of measuring switching times and on-state voltages during PWM operation. The system is evaluated in double-pulse experiments as well as in regular inverter operation. Finally, the power module's thermal impedance system is artificially increased and the system's capability to detect this change is shown.

Keywords

    Hardware, Maintenance, Measurement, Reliability, SiC, Thermal Modeling, TSEP

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Junction Temperature Estimation of SiC MOSFETs during Inverter Operation Using Switching Times and On-State Voltages. / Herwig, Daniel; Mertens, Axel.
2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. p. 2747-2754 (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Herwig, D & Mertens, A 2021, Junction Temperature Estimation of SiC MOSFETs during Inverter Operation Using Switching Times and On-State Voltages. in 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 2747-2754, 13th IEEE Energy Conversion Congress and Exposition, ECCE 2021, Virtual, Online, Canada, 10 Oct 2021. https://doi.org/10.1109/ECCE47101.2021.9595535
Herwig, D., & Mertens, A. (2021). Junction Temperature Estimation of SiC MOSFETs during Inverter Operation Using Switching Times and On-State Voltages. In 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings (pp. 2747-2754). (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE47101.2021.9595535
Herwig D, Mertens A. Junction Temperature Estimation of SiC MOSFETs during Inverter Operation Using Switching Times and On-State Voltages. In 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. p. 2747-2754. (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings). doi: 10.1109/ECCE47101.2021.9595535
Herwig, Daniel ; Mertens, Axel. / Junction Temperature Estimation of SiC MOSFETs during Inverter Operation Using Switching Times and On-State Voltages. 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 2747-2754 (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings).
Download
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abstract = "Temperature-sensitive electrical parameters (TSEPs) can be used for on-line determination of the junction temperature of semiconductors and as key parameters for degradation detection. Typical TSEPs are on-state voltages and switching times. Measuring these TSEPs of fast switching SiC power modules with high switching frequencies is challenging in terms of circuit design. This work presents TSEP measurement hardware for SiC modules capable of measuring switching times and on-state voltages during PWM operation. The system is evaluated in double-pulse experiments as well as in regular inverter operation. Finally, the power module's thermal impedance system is artificially increased and the system's capability to detect this change is shown.",
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