Details
| Original language | English |
|---|---|
| Pages (from-to) | 379-383 |
| Number of pages | 5 |
| Journal | Energy Procedia |
| Volume | 124 |
| Publication status | Published - 21 Sept 2017 |
| Externally published | Yes |
| Event | 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Germany Duration: 3 Apr 2017 → 5 Apr 2017 |
Abstract
We report on two different approaches to fabricate interdigitated back contact silicon heterojunction solar cells without using indium tin oxide (ITO). The standard ITO/Ag backend is either modified by replacing ITO with aluminum-doped zinc oxide (AZO) or completely replaced by a sole aluminum (Al) layer. The very transparent AZO enhances the optical properties at the rear side resulting in an increase in short-circuit current density. The efficiency of the AZO cells remains on the level of the ITO ones, as the fill factor drops slightly. On the contrary, the contact resistivity of annealed Al, in comparison to ITO and AZO, to the emitter and BSF layers is much lower, thus the fill factor is increased. Despite lower open circuit voltages, cells with Al achieve efficiencies of up 22 %, a gain of 0.5 %abs compared to the ITO reference.
Keywords
- aluminium, aluminum doped zinc-oxide, back contact, ITO, metallization, silicon heterojunction
ASJC Scopus subject areas
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In: Energy Procedia, Vol. 124, 21.09.2017, p. 379-383.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - ITO-free metallization for interdigitated back contact silicon heterojunction solar cells
AU - Stang, Johann Christoph
AU - Hendrichs, Max Sebastian
AU - Merkle, Agnes
AU - Peibst, Robby
AU - Stannowski, Bernd
AU - Korte, Lars
AU - Rech, Bernd
N1 - Funding Information: This work was supported by the European Union’s Horizon 2020 Programme for research, technological development and demonstration under grant agreement no. 727523 (project NextBase). Furthermore, the authors thank P. Wagner, H. Rhein, E. Conrad, M. Wittig, K. Jacob, M. Hartig, H. Kohlenberg, and T. Friedrich for their support in fabricating the solar cells. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/9/21
Y1 - 2017/9/21
N2 - We report on two different approaches to fabricate interdigitated back contact silicon heterojunction solar cells without using indium tin oxide (ITO). The standard ITO/Ag backend is either modified by replacing ITO with aluminum-doped zinc oxide (AZO) or completely replaced by a sole aluminum (Al) layer. The very transparent AZO enhances the optical properties at the rear side resulting in an increase in short-circuit current density. The efficiency of the AZO cells remains on the level of the ITO ones, as the fill factor drops slightly. On the contrary, the contact resistivity of annealed Al, in comparison to ITO and AZO, to the emitter and BSF layers is much lower, thus the fill factor is increased. Despite lower open circuit voltages, cells with Al achieve efficiencies of up 22 %, a gain of 0.5 %abs compared to the ITO reference.
AB - We report on two different approaches to fabricate interdigitated back contact silicon heterojunction solar cells without using indium tin oxide (ITO). The standard ITO/Ag backend is either modified by replacing ITO with aluminum-doped zinc oxide (AZO) or completely replaced by a sole aluminum (Al) layer. The very transparent AZO enhances the optical properties at the rear side resulting in an increase in short-circuit current density. The efficiency of the AZO cells remains on the level of the ITO ones, as the fill factor drops slightly. On the contrary, the contact resistivity of annealed Al, in comparison to ITO and AZO, to the emitter and BSF layers is much lower, thus the fill factor is increased. Despite lower open circuit voltages, cells with Al achieve efficiencies of up 22 %, a gain of 0.5 %abs compared to the ITO reference.
KW - aluminium
KW - aluminum doped zinc-oxide
KW - back contact
KW - ITO
KW - metallization
KW - silicon heterojunction
UR - http://www.scopus.com/inward/record.url?scp=85031894987&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2017.09.253
DO - 10.1016/j.egypro.2017.09.253
M3 - Conference article
AN - SCOPUS:85031894987
VL - 124
SP - 379
EP - 383
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Y2 - 3 April 2017 through 5 April 2017
ER -