Details
| Original language | English |
|---|---|
| Pages (from-to) | 6270-6275 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 49 |
| Issue number | 11 |
| Early online date | 14 Aug 2020 |
| Publication status | Published - Nov 2020 |
Abstract
The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation dose. The presence of nitrogen incorporation on the Gd2O3 layer was studied using Auger electron spectroscopy. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in Gd2O3. A maximum concentration of 11% was obtained for nitrogen in the interface between the silicon dioxide and Gd2O3 layer and the implanted areas of the Gd2O3 oxide layer after sputter depth profiling. The nitrogen distribution in the layer was found to be non-uniform. Nitrogen incorporation sharply reduced the leakage current and effectively suppressed the hysteresis. Leakage current was two orders lower compared with the pure Gd2O3.
Keywords
- epitaxial growth, Ion implantation, leakage current, nitrogen concentration, oxynitrides
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Journal of Electronic Materials, Vol. 49, No. 11, 11.2020, p. 6270-6275.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties
AU - Joseph, A.
AU - Lilienkamp, G.
AU - Wietler, Tobias
AU - Osten, Hans-Jörg
N1 - Funding information: A.J. would like to thank the Hannover School for Nanotechnology (HSN) for a fellowship. Thanks to TU Clausthal for Auger electron spectroscopy characterization and Helmholtz-Zentrum Dresden-Rossendorf e.V., a member of the Helmholtz Association for ion implantation. We also thank the Laboratory of Nano and Quantum Engineering (LNQE) of the Leibniz Universitat Hannover. A.J. would like to thank the Hannover School for Nanotechnology (HSN) for a fellowship. Thanks to TU Clausthal for Auger electron spectroscopy characterization and Helmholtz-Zentrum Dresden-Rossendorf e.V., a member of the Helmholtz Association for ion implantation. We also thank the Laboratory of Nano and Quantum Engineering (LNQE) of the Leibniz Universitat Hannover.
PY - 2020/11
Y1 - 2020/11
N2 - The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation dose. The presence of nitrogen incorporation on the Gd2O3 layer was studied using Auger electron spectroscopy. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in Gd2O3. A maximum concentration of 11% was obtained for nitrogen in the interface between the silicon dioxide and Gd2O3 layer and the implanted areas of the Gd2O3 oxide layer after sputter depth profiling. The nitrogen distribution in the layer was found to be non-uniform. Nitrogen incorporation sharply reduced the leakage current and effectively suppressed the hysteresis. Leakage current was two orders lower compared with the pure Gd2O3.
AB - The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation dose. The presence of nitrogen incorporation on the Gd2O3 layer was studied using Auger electron spectroscopy. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in Gd2O3. A maximum concentration of 11% was obtained for nitrogen in the interface between the silicon dioxide and Gd2O3 layer and the implanted areas of the Gd2O3 oxide layer after sputter depth profiling. The nitrogen distribution in the layer was found to be non-uniform. Nitrogen incorporation sharply reduced the leakage current and effectively suppressed the hysteresis. Leakage current was two orders lower compared with the pure Gd2O3.
KW - epitaxial growth
KW - Ion implantation
KW - leakage current
KW - nitrogen concentration
KW - oxynitrides
UR - http://www.scopus.com/inward/record.url?scp=85089445418&partnerID=8YFLogxK
U2 - 10.1007/s11664-020-08392-4
DO - 10.1007/s11664-020-08392-4
M3 - Article
AN - SCOPUS:85089445418
VL - 49
SP - 6270
EP - 6275
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 11
ER -