Details
| Original language | English |
|---|---|
| Title of host publication | 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings |
| Editors | Volker Haublein, Heiner Ryssel |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 90-93 |
| Number of pages | 4 |
| ISBN (electronic) | 9781538668283 |
| Publication status | Published - Sept 2018 |
| Event | 22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Germany Duration: 16 Sept 2018 → 21 Sept 2018 |
Publication series
| Name | Proceedings of the International Conference on Ion Implantation Technology |
|---|---|
| Volume | 2018-September |
Abstract
We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
Keywords
- ion implantation, silicon, solar cells
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
Sustainable Development Goals
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2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. ed. / Volker Haublein; Heiner Ryssel. Institute of Electrical and Electronics Engineers Inc., 2018. p. 90-93 8807962 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2018-September).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Ion Implantation of As, P, B, BF and BF2 on Planar and Alkaline-Textured Si(001) Surfaces for Photovoltaic Applications
AU - Krügener, Jan
AU - Kiefer, Fabian
AU - Peibst, Robby
AU - Osten, H. Jörg
N1 - Funding information: ACKNOWLEDGMENT This work was funded by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325480C and no. 0325827C.
PY - 2018/9
Y1 - 2018/9
N2 - We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
AB - We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
KW - ion implantation
KW - silicon
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=85071919733&partnerID=8YFLogxK
U2 - 10.1109/iit.2018.8807962
DO - 10.1109/iit.2018.8807962
M3 - Conference contribution
AN - SCOPUS:85071919733
T3 - Proceedings of the International Conference on Ion Implantation Technology
SP - 90
EP - 93
BT - 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
A2 - Haublein, Volker
A2 - Ryssel, Heiner
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Conference on Ion Implantation Technology, IIT 2018
Y2 - 16 September 2018 through 21 September 2018
ER -