Ion beam-assisted deposition of MgF2 and YbF3 films

Research output: Contribution to journalArticleResearchpeer review

Authors

  • M. Kennedy
  • Detlev Ristau
  • Hansjörg Niederwald

External Research Organisations

  • Laser Zentrum Hannover e.V. (LZH)
  • Carl Zeiss SMT GmbH
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Details

Original languageEnglish
Pages (from-to)191-195
Number of pages5
JournalThin Solid Films
Volume333
Issue number1-2
Publication statusPublished - 25 Nov 1998
Externally publishedYes

Abstract

For ion-assisted deposition of thin MgF2 and YbF3 films a gridless end-Hall ion source has been used. The effects of ion energy, ion current and different working gases on the optical and mechanical properties of the single layers, deposited at ambient temperatures, have been investigated. For both materials, IAD with xenon proved to be superior to argon and argon-oxygen mixture, respectively. Compared to hot conventional films, the refractive indices of single layers deposited with optimized parameters could be increased. No significant absorption was observed in the vis spectral range for these layers, in the UV spectral range low absorption for IAD-coatings was achieved. With respect to the mechanical properties, the optimized IAD-MgF2-films were comparable to conventional coatings, and the durability of YbF3-films could be clearly enhanced by the applied IAD-process.

Keywords

    Fluorides, Ion bombardment, Optical coatings, Optical properties

ASJC Scopus subject areas

Cite this

Ion beam-assisted deposition of MgF2 and YbF3 films. / Kennedy, M.; Ristau, Detlev; Niederwald, Hansjörg.
In: Thin Solid Films, Vol. 333, No. 1-2, 25.11.1998, p. 191-195.

Research output: Contribution to journalArticleResearchpeer review

Kennedy, M, Ristau, D & Niederwald, H 1998, 'Ion beam-assisted deposition of MgF2 and YbF3 films', Thin Solid Films, vol. 333, no. 1-2, pp. 191-195. https://doi.org/10.1016/S0040-6090(98)00847-5
Kennedy M, Ristau D, Niederwald H. Ion beam-assisted deposition of MgF2 and YbF3 films. Thin Solid Films. 1998 Nov 25;333(1-2):191-195. doi: 10.1016/S0040-6090(98)00847-5
Kennedy, M. ; Ristau, Detlev ; Niederwald, Hansjörg. / Ion beam-assisted deposition of MgF2 and YbF3 films. In: Thin Solid Films. 1998 ; Vol. 333, No. 1-2. pp. 191-195.
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AU - Kennedy, M.

AU - Ristau, Detlev

AU - Niederwald, Hansjörg

N1 - Funding information: This work was supported by the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie (BMBF) under contract number 13 N 6989.

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AB - For ion-assisted deposition of thin MgF2 and YbF3 films a gridless end-Hall ion source has been used. The effects of ion energy, ion current and different working gases on the optical and mechanical properties of the single layers, deposited at ambient temperatures, have been investigated. For both materials, IAD with xenon proved to be superior to argon and argon-oxygen mixture, respectively. Compared to hot conventional films, the refractive indices of single layers deposited with optimized parameters could be increased. No significant absorption was observed in the vis spectral range for these layers, in the UV spectral range low absorption for IAD-coatings was achieved. With respect to the mechanical properties, the optimized IAD-MgF2-films were comparable to conventional coatings, and the durability of YbF3-films could be clearly enhanced by the applied IAD-process.

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KW - Ion bombardment

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