Details
| Original language | English |
|---|---|
| Title of host publication | Laser-Induced Damage in Optical Materials: 2003 |
| Subtitle of host publication | 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado |
| Place of Publication | Bellingham |
| Publisher | SPIE |
| Pages | 501-514 |
| Number of pages | 14 |
| ISBN (print) | 0-8194-5163-0 |
| Publication status | Published - 10 Jun 2004 |
| Externally published | Yes |
| Event | 35th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials 2003 - Boulder, CO, United States Duration: 22 Sept 2003 → 24 Sept 2003 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Publisher | SPIE |
| Volume | 5273 |
| ISSN (Print) | 0277-786X |
Abstract
Ultra-short pulse systems are considered as innovative laser sources for a variety of applications in micro material structuring, medicine and diagnostics. Current commercial systems are still lacking in output power limiting the throughput and the economic efficiency within a production line. In the optimization of ultra short pulse sources of the next generation, special effects in optical components during interaction with ultra-short pulses play a major role. Especially, low damage thresholds and non-linear absorptance have already been observed within the activities of the EUREKA-project CHOCLAB II, which are concentrated on the evaluation of multiple-pulse damage and the absorptance of fs-optical components according to the International Standards ISO 11254-2 and ISO 11551. In this paper, a theoretical model on the basis of photo- and avalanche ionization is presented describing the incidence of damage as a consequence of a sufficient high density of conduction band electrons. Furthermore, the influence of the Kerr-effect and conduction band electrons on the optical properties of dielectrics is investigated theoretically. From our calculations, a significant increase in reflectance due to the dominant Kerr-effect can be deduced as well as a noticeable increase in absorptance induced by free electron heating already at energy density values clearly below the damage threshold. Finally, results of an experimental investigation in the influence of the internal field strength in a dielectric layer stack on the damage threshold are described. The experiments clearly support the assumption already stated in other publications, that the field intensity formed by the optical design plays a key role for damage resistance of optical coatings for ultrashort pulses.
Keywords
- Avalanche-ionization, Critical electron density, Keldysh, Kerr-effect, Multiple-pulse damage threshold, Nonlinear absorptance, Ultrashort pulses
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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- BibTeX
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Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham: SPIE, 2004. p. 501-514 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5273).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Investigations in the nonlinear behavior of dielectrics by using ultrashort pulses
AU - Starke, Kai
AU - Ristau, Detlev
AU - Welling, Herbert
AU - Amotchkina, Tatiana
AU - Trubetskov, Michael K.
AU - Chirkin, A. S.
AU - Tikhonravov, Andrei A.
PY - 2004/6/10
Y1 - 2004/6/10
N2 - Ultra-short pulse systems are considered as innovative laser sources for a variety of applications in micro material structuring, medicine and diagnostics. Current commercial systems are still lacking in output power limiting the throughput and the economic efficiency within a production line. In the optimization of ultra short pulse sources of the next generation, special effects in optical components during interaction with ultra-short pulses play a major role. Especially, low damage thresholds and non-linear absorptance have already been observed within the activities of the EUREKA-project CHOCLAB II, which are concentrated on the evaluation of multiple-pulse damage and the absorptance of fs-optical components according to the International Standards ISO 11254-2 and ISO 11551. In this paper, a theoretical model on the basis of photo- and avalanche ionization is presented describing the incidence of damage as a consequence of a sufficient high density of conduction band electrons. Furthermore, the influence of the Kerr-effect and conduction band electrons on the optical properties of dielectrics is investigated theoretically. From our calculations, a significant increase in reflectance due to the dominant Kerr-effect can be deduced as well as a noticeable increase in absorptance induced by free electron heating already at energy density values clearly below the damage threshold. Finally, results of an experimental investigation in the influence of the internal field strength in a dielectric layer stack on the damage threshold are described. The experiments clearly support the assumption already stated in other publications, that the field intensity formed by the optical design plays a key role for damage resistance of optical coatings for ultrashort pulses.
AB - Ultra-short pulse systems are considered as innovative laser sources for a variety of applications in micro material structuring, medicine and diagnostics. Current commercial systems are still lacking in output power limiting the throughput and the economic efficiency within a production line. In the optimization of ultra short pulse sources of the next generation, special effects in optical components during interaction with ultra-short pulses play a major role. Especially, low damage thresholds and non-linear absorptance have already been observed within the activities of the EUREKA-project CHOCLAB II, which are concentrated on the evaluation of multiple-pulse damage and the absorptance of fs-optical components according to the International Standards ISO 11254-2 and ISO 11551. In this paper, a theoretical model on the basis of photo- and avalanche ionization is presented describing the incidence of damage as a consequence of a sufficient high density of conduction band electrons. Furthermore, the influence of the Kerr-effect and conduction band electrons on the optical properties of dielectrics is investigated theoretically. From our calculations, a significant increase in reflectance due to the dominant Kerr-effect can be deduced as well as a noticeable increase in absorptance induced by free electron heating already at energy density values clearly below the damage threshold. Finally, results of an experimental investigation in the influence of the internal field strength in a dielectric layer stack on the damage threshold are described. The experiments clearly support the assumption already stated in other publications, that the field intensity formed by the optical design plays a key role for damage resistance of optical coatings for ultrashort pulses.
KW - Avalanche-ionization
KW - Critical electron density
KW - Keldysh
KW - Kerr-effect
KW - Multiple-pulse damage threshold
KW - Nonlinear absorptance
KW - Ultrashort pulses
UR - http://www.scopus.com/inward/record.url?scp=5544312390&partnerID=8YFLogxK
U2 - 10.1117/12.525132
DO - 10.1117/12.525132
M3 - Conference contribution
AN - SCOPUS:5544312390
SN - 0-8194-5163-0
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 501
EP - 514
BT - Laser-Induced Damage in Optical Materials: 2003
PB - SPIE
CY - Bellingham
T2 - 35th Annual Boulder Damage Symposium
Y2 - 22 September 2003 through 24 September 2003
ER -