Details
| Original language | English |
|---|---|
| Article number | 139561 |
| Journal | THIN SOLID FILMS |
| Volume | 763 |
| Early online date | 29 Oct 2022 |
| Publication status | Published - 1 Dec 2022 |
Abstract
In this work, we investigated fully relaxed SiGe and pure Ge layers on Si(111) substrates, regarding their temperature stability. The layers were annealed at various temperatures up to 650 °C directly after growth. The Ge content of the Si1−xGex layers was varied between 0.6 and 1. We investigated effects due to surface segregation of Ge in the SiGe layers. During heat treatment, different surface reconstructions were observed. The SiGe layers remained smooth with a root-mean square surface roughness below 0.5 nm up to temperatures of 500 °C and a 7 × 7 surface reconstruction was seen. Annealing at higher temperatures corresponding to a 7 × 7–“1 × 1” phase transition, the surface roughness increased to more than 2 nm and island formation was observed. We measured the in-plane lattice constant of the surface as a function of temperature and confirmed a strong effect of Ge segregation on the surface strain. The Ge accumulation at the surface was confirmed by angle-resolved X-ray photoelectron spectroscopy. The high adatom density of the “1 × 1” reconstruction in combination with compressive strain led to island nucleation when cooling down. Pure Ge layers remained smooth even after annealing up to 650 °C.
Keywords
- Germanium segregation, Silicon (111), Silicon germanium, Surface reconstruction, Temperature stability, Virtual substrate
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 763, 139561, 01.12.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates
AU - Genath, Hannah
AU - Norberg, Jenny
AU - Wolpensinger, Bettina
AU - Osten, H. Jörg
N1 - Funding Information: We are grateful to A. Fissel for fruitful discussions and helpful remarks on this work.
PY - 2022/12/1
Y1 - 2022/12/1
N2 - In this work, we investigated fully relaxed SiGe and pure Ge layers on Si(111) substrates, regarding their temperature stability. The layers were annealed at various temperatures up to 650 °C directly after growth. The Ge content of the Si1−xGex layers was varied between 0.6 and 1. We investigated effects due to surface segregation of Ge in the SiGe layers. During heat treatment, different surface reconstructions were observed. The SiGe layers remained smooth with a root-mean square surface roughness below 0.5 nm up to temperatures of 500 °C and a 7 × 7 surface reconstruction was seen. Annealing at higher temperatures corresponding to a 7 × 7–“1 × 1” phase transition, the surface roughness increased to more than 2 nm and island formation was observed. We measured the in-plane lattice constant of the surface as a function of temperature and confirmed a strong effect of Ge segregation on the surface strain. The Ge accumulation at the surface was confirmed by angle-resolved X-ray photoelectron spectroscopy. The high adatom density of the “1 × 1” reconstruction in combination with compressive strain led to island nucleation when cooling down. Pure Ge layers remained smooth even after annealing up to 650 °C.
AB - In this work, we investigated fully relaxed SiGe and pure Ge layers on Si(111) substrates, regarding their temperature stability. The layers were annealed at various temperatures up to 650 °C directly after growth. The Ge content of the Si1−xGex layers was varied between 0.6 and 1. We investigated effects due to surface segregation of Ge in the SiGe layers. During heat treatment, different surface reconstructions were observed. The SiGe layers remained smooth with a root-mean square surface roughness below 0.5 nm up to temperatures of 500 °C and a 7 × 7 surface reconstruction was seen. Annealing at higher temperatures corresponding to a 7 × 7–“1 × 1” phase transition, the surface roughness increased to more than 2 nm and island formation was observed. We measured the in-plane lattice constant of the surface as a function of temperature and confirmed a strong effect of Ge segregation on the surface strain. The Ge accumulation at the surface was confirmed by angle-resolved X-ray photoelectron spectroscopy. The high adatom density of the “1 × 1” reconstruction in combination with compressive strain led to island nucleation when cooling down. Pure Ge layers remained smooth even after annealing up to 650 °C.
KW - Germanium segregation
KW - Silicon (111)
KW - Silicon germanium
KW - Surface reconstruction
KW - Temperature stability
KW - Virtual substrate
UR - http://www.scopus.com/inward/record.url?scp=85141367082&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2022.139561
DO - 10.1016/j.tsf.2022.139561
M3 - Article
AN - SCOPUS:85141367082
VL - 763
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
M1 - 139561
ER -