Details
| Original language | Undefined/Unknown |
|---|---|
| Pages (from-to) | 187 - 196 |
| Journal | Sensors and Actuators A: Physical |
| Volume | 86 |
| Issue number | 3 |
| Publication status | Published - 2000 |
Abstract
Keywords
- Light-addressable potentiometric sensor
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In: Sensors and Actuators A: Physical, Vol. 86, No. 3, 2000, p. 187 - 196.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Investigation of the spatial resolution of the light-addressable potentiometric sensor
AU - George, M.
AU - Parak, W. J.
AU - Gerhardt, I.
AU - Moritz, W.
AU - Kaesen, F.
AU - Geiger, H.
AU - Eisele, I.
AU - Gaub, H. E.
N1 - Funding information: Parts of this study were supported by BMBF Germany (grant no. 0310845A).
PY - 2000
Y1 - 2000
N2 - The spatial resolution of the light-addressable potentiometric sensor (LAPS) is investigated both theoretically and experimentally. For a theoretical analysis, the diffusion equation for minority charge carriers in the semiconductor was solved. The results suggest that by thinning the semiconductor wafer, the spatial resolution of the LAPS is no longer limited by the bulk minority charge carrier diffusion length. Spatial resolution in the micrometer range should thus be possible. For an experimental analysis, the effective diffusion length of light-generated charge carriers parallel to the sensor surface was measured. The results show that by increasing the doping density and by thinning the semiconductor substrate, spatial resolution of about 15 [mu]m is obtained.
AB - The spatial resolution of the light-addressable potentiometric sensor (LAPS) is investigated both theoretically and experimentally. For a theoretical analysis, the diffusion equation for minority charge carriers in the semiconductor was solved. The results suggest that by thinning the semiconductor wafer, the spatial resolution of the LAPS is no longer limited by the bulk minority charge carrier diffusion length. Spatial resolution in the micrometer range should thus be possible. For an experimental analysis, the effective diffusion length of light-generated charge carriers parallel to the sensor surface was measured. The results show that by increasing the doping density and by thinning the semiconductor substrate, spatial resolution of about 15 [mu]m is obtained.
KW - Light-addressable potentiometric sensor
U2 - DOI: 10.1016/S0924-4247(00)00455-6
DO - DOI: 10.1016/S0924-4247(00)00455-6
M3 - Article
VL - 86
SP - 187
EP - 196
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
SN - 0924-4247
IS - 3
ER -