Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Research output: Contribution to journal › Article › Research › peer review

Authors

  • M. Badylevich
  • S. Shamuilia
  • V. V. Afanas'ev
  • A. Stesmans
  • A. Laha
  • H. J. Osten
  • A. Fissel

Research Organisations

External Research Organisations

  • KU Leuven
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Details

Original languageEnglish
Article number252101
JournalApplied physics letters
Volume90
Issue number25
Publication statusPublished - 18 Jun 2007

Abstract

Internal photoemission, photoconductivity, and spectroscopic ellipsometry experiments were carried out to characterize the electronic structure of interfaces of (001) and (111)-oriented Si with crystalline (epitaxially grown) and amorphous Gd2O3 insulators. The energy barriers for electrons and holes (3.2 and 3.9 eV, respectively) appear to be sensitive neither to the orientation of the Si crystal surface nor to the oxide phase (crystalline or amorphous). This result indicates that despite the difference in Si-O bond density in going from (001) to (111)Si, the interface dipoles do not ensue any measurable effect on the electronic structure of the interface and the associated band offsets.

ASJC Scopus subject areas

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Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. / Badylevich, M.; Shamuilia, S.; Afanas'ev, V. V. et al.
In: Applied physics letters, Vol. 90, No. 25, 252101, 18.06.2007.

Research output: Contribution to journal › Article › Research › peer review

Badylevich M, Shamuilia S, Afanas'ev VV, Stesmans A, Laha A, Osten HJ et al. Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. Applied physics letters. 2007 Jun 18;90(25):252101. doi: 10.1063/1.2746419
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abstract = "Internal photoemission, photoconductivity, and spectroscopic ellipsometry experiments were carried out to characterize the electronic structure of interfaces of (001) and (111)-oriented Si with crystalline (epitaxially grown) and amorphous Gd2O3 insulators. The energy barriers for electrons and holes (3.2 and 3.9 eV, respectively) appear to be sensitive neither to the orientation of the Si crystal surface nor to the oxide phase (crystalline or amorphous). This result indicates that despite the difference in Si-O bond density in going from (001) to (111)Si, the interface dipoles do not ensue any measurable effect on the electronic structure of the interface and the associated band offsets.",
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AU - Badylevich, M.

AU - Shamuilia, S.

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Laha, A.

AU - Osten, H. J.

AU - Fissel, A.

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