Details
| Original language | English |
|---|---|
| Pages (from-to) | S281-S284 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 6 SUPPL. 1 |
| Publication status | Published - 22 Oct 2009 |
Abstract
We present first investigations of the electrical characteristics of high-k amorphous BaO, SrO and crystalline Ba0.7Sr0.3O films on n-Si(001). The MOS structures were grown in a UHV chamber on structured SiO2 samples with Si(001) windows and were capped with Au layers afterwards for ex-situ electrical characterization. The smallest capacitance equivalent oxide thicknesses (relative to SiO2) achieved so far in BaO, SrO and Ba0.7Sr0.3O MOS-diodes were 1.0, 3.5 and 1.6 nm at oxide thicknesses of 5, 10 and 10 nm, respectively. The corresponding leakage current densities at + 1 V accumulation bias were 2.1, 1.3 · 10- 5 and 4.7 · 10- 6 A/cm2. The lowest interface trap densities observed at ∼ 0.2 eV below the conduction band in MOS-diodes with BaO, SrO and Ba0.7Sr0.3O films were 5.2 · 1012, 9.7 · 1011 and 9.1 · 1010 eV- 1 cm- 2, respectively. These results suggest that alkaline-earth oxides might be interesting materials for application as high-k gate dielectrics.
Keywords
- Gate oxides, Heterostructures, High-k dielectrics, Insulators, Interfaces
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 22.10.2009, p. S281-S284.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics
AU - Cosceev, A.
AU - Müller-Sajak, D.
AU - Pfnür, Herbert
AU - Hofmann, Karl Rüdiger
N1 - Funding information: We acknowledge the financial support from the Deutsche Forschungsgemeinschaft under project numbers Pf238/18 and Ho1885/9 .
PY - 2009/10/22
Y1 - 2009/10/22
N2 - We present first investigations of the electrical characteristics of high-k amorphous BaO, SrO and crystalline Ba0.7Sr0.3O films on n-Si(001). The MOS structures were grown in a UHV chamber on structured SiO2 samples with Si(001) windows and were capped with Au layers afterwards for ex-situ electrical characterization. The smallest capacitance equivalent oxide thicknesses (relative to SiO2) achieved so far in BaO, SrO and Ba0.7Sr0.3O MOS-diodes were 1.0, 3.5 and 1.6 nm at oxide thicknesses of 5, 10 and 10 nm, respectively. The corresponding leakage current densities at + 1 V accumulation bias were 2.1, 1.3 · 10- 5 and 4.7 · 10- 6 A/cm2. The lowest interface trap densities observed at ∼ 0.2 eV below the conduction band in MOS-diodes with BaO, SrO and Ba0.7Sr0.3O films were 5.2 · 1012, 9.7 · 1011 and 9.1 · 1010 eV- 1 cm- 2, respectively. These results suggest that alkaline-earth oxides might be interesting materials for application as high-k gate dielectrics.
AB - We present first investigations of the electrical characteristics of high-k amorphous BaO, SrO and crystalline Ba0.7Sr0.3O films on n-Si(001). The MOS structures were grown in a UHV chamber on structured SiO2 samples with Si(001) windows and were capped with Au layers afterwards for ex-situ electrical characterization. The smallest capacitance equivalent oxide thicknesses (relative to SiO2) achieved so far in BaO, SrO and Ba0.7Sr0.3O MOS-diodes were 1.0, 3.5 and 1.6 nm at oxide thicknesses of 5, 10 and 10 nm, respectively. The corresponding leakage current densities at + 1 V accumulation bias were 2.1, 1.3 · 10- 5 and 4.7 · 10- 6 A/cm2. The lowest interface trap densities observed at ∼ 0.2 eV below the conduction band in MOS-diodes with BaO, SrO and Ba0.7Sr0.3O films were 5.2 · 1012, 9.7 · 1011 and 9.1 · 1010 eV- 1 cm- 2, respectively. These results suggest that alkaline-earth oxides might be interesting materials for application as high-k gate dielectrics.
KW - Gate oxides
KW - Heterostructures
KW - High-k dielectrics
KW - Insulators
KW - Interfaces
UR - http://www.scopus.com/inward/record.url?scp=73649112393&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.10.108
DO - 10.1016/j.tsf.2009.10.108
M3 - Article
AN - SCOPUS:73649112393
VL - 518
SP - S281-S284
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 6 SUPPL. 1
ER -