Details
| Original language | English |
|---|---|
| Pages (from-to) | 13-18 |
| Number of pages | 6 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, United States Duration: 29 Sept 1997 → 3 Oct 1997 |
Abstract
In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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In: Conference Record of the IEEE Photovoltaic Specialists Conference, 1997, p. 13-18.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Investigation of carrier lifetime instabilities in Cz-grown silicon
AU - Schmidt, Jan
AU - Aberle, Armin G.
AU - Hezel, Rudolf
PY - 1997
Y1 - 1997
N2 - In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.
AB - In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.
UR - http://www.scopus.com/inward/record.url?scp=0031370370&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0031370370
SP - 13
EP - 18
JO - Conference Record of the IEEE Photovoltaic Specialists Conference
JF - Conference Record of the IEEE Photovoltaic Specialists Conference
SN - 0160-8371
T2 - 1997 IEEE 26th Photovoltaic Specialists Conference
Y2 - 29 September 1997 through 3 October 1997
ER -