Details
| Original language | English |
|---|---|
| Pages (from-to) | 695-707 |
| Number of pages | 13 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 205 |
| Issue number | 4 |
| Early online date | 4 Apr 2008 |
| Publication status | Published - Apr 2008 |
Abstract
The ability to integrate crystalline metal oxide dielectric barrier layers into silicon structures can open the way for a variety of novel application which enhances the functionality and flexibility raging from high-K replacements in future MOS devices to oxide/silicon/oxide heterostructures for nanoelectronic application in quantum-effect devices. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results for Gd 2O 3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-K materials replacing SiO 2 in future MOS devices. Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd 2O 3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures. Finally, we will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum-well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum-well. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). In addition, structures consisting of a single-crystalline oxide layer with embedded Si nanoclusters for memory applications will also be demonstrated.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Physica Status Solidi (A) Applications and Materials Science, Vol. 205, No. 4, 04.2008, p. 695-707.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Introducing crystalline rare-earth oxides into Si technologies
AU - Osten, H. J.
AU - Laha, A.
AU - Czernohorsky, M.
AU - Bugiel, E.
AU - Dargis, R.
AU - Fissel, A.
N1 - Acknowledgements: Part of this work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS and the KrisMOS projects. One of the au-thors (AL) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship.
PY - 2008/4
Y1 - 2008/4
N2 - The ability to integrate crystalline metal oxide dielectric barrier layers into silicon structures can open the way for a variety of novel application which enhances the functionality and flexibility raging from high-K replacements in future MOS devices to oxide/silicon/oxide heterostructures for nanoelectronic application in quantum-effect devices. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results for Gd 2O 3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-K materials replacing SiO 2 in future MOS devices. Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd 2O 3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures. Finally, we will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum-well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum-well. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). In addition, structures consisting of a single-crystalline oxide layer with embedded Si nanoclusters for memory applications will also be demonstrated.
AB - The ability to integrate crystalline metal oxide dielectric barrier layers into silicon structures can open the way for a variety of novel application which enhances the functionality and flexibility raging from high-K replacements in future MOS devices to oxide/silicon/oxide heterostructures for nanoelectronic application in quantum-effect devices. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results for Gd 2O 3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-K materials replacing SiO 2 in future MOS devices. Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd 2O 3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures. Finally, we will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum-well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum-well. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). In addition, structures consisting of a single-crystalline oxide layer with embedded Si nanoclusters for memory applications will also be demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=54949135456&partnerID=8YFLogxK
U2 - 10.1002/pssa.200723509
DO - 10.1002/pssa.200723509
M3 - Article
AN - SCOPUS:54949135456
VL - 205
SP - 695
EP - 707
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 4
ER -