Loading [MathJax]/extensions/tex2jax.js

Interwire coupling for In(4×1) /Si(111) probed by surface transport

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Frederik Edler
  • Ilio Miccoli
  • S. Demuth
  • Herbert Pfnür
  • Christoph Tegenkamp

External Research Organisations

  • Max-Planck-Institut für Eisenforschung (MPIE)
  • Paderborn University

Details

Original languageEnglish
Article number085426
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number8
Publication statusPublished - 25 Aug 2015

Abstract

The In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (σ||) and perpendicular (σ) components are measured separately. The analysis of the I(V) curves reveals that σ is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures.

ASJC Scopus subject areas

Cite this

Interwire coupling for In(4×1) /Si(111) probed by surface transport. / Edler, Frederik; Miccoli, Ilio; Demuth, S. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 8, 085426, 25.08.2015.

Research output: Contribution to journalArticleResearchpeer review

Edler, F, Miccoli, I, Demuth, S, Pfnür, H, Wippermann, SM, Lücke, A, Schmidt, WG & Tegenkamp, C 2015, 'Interwire coupling for In(4×1) /Si(111) probed by surface transport', Physical Review B - Condensed Matter and Materials Physics, vol. 92, no. 8, 085426. https://doi.org/10.1103/PhysRevB.92.085426
Edler, F., Miccoli, I., Demuth, S., Pfnür, H., Wippermann, S. M., Lücke, A., Schmidt, W. G., & Tegenkamp, C. (2015). Interwire coupling for In(4×1) /Si(111) probed by surface transport. Physical Review B - Condensed Matter and Materials Physics, 92(8), Article 085426. https://doi.org/10.1103/PhysRevB.92.085426
Edler F, Miccoli I, Demuth S, Pfnür H, Wippermann SM, Lücke A et al. Interwire coupling for In(4×1) /Si(111) probed by surface transport. Physical Review B - Condensed Matter and Materials Physics. 2015 Aug 25;92(8):085426. doi: 10.1103/PhysRevB.92.085426
Edler, Frederik ; Miccoli, Ilio ; Demuth, S. et al. / Interwire coupling for In(4×1) /Si(111) probed by surface transport. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 92, No. 8.
Download
@article{26fa4fe7a83049a781887bd20c74c422,
title = "Interwire coupling for In(4×1) /Si(111) probed by surface transport",
abstract = "The In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (σ||) and perpendicular (σ) components are measured separately. The analysis of the I(V) curves reveals that σ is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures.",
author = "Frederik Edler and Ilio Miccoli and S. Demuth and Herbert Pfn{\"u}r and Wippermann, {Stefan Martin} and Andreas L{\"u}cke and Schmidt, {Wolf Gero} and Christoph Tegenkamp",
year = "2015",
month = aug,
day = "25",
doi = "10.1103/PhysRevB.92.085426",
language = "English",
volume = "92",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Institute of Physics",
number = "8",

}

Download

TY - JOUR

T1 - Interwire coupling for In(4×1) /Si(111) probed by surface transport

AU - Edler, Frederik

AU - Miccoli, Ilio

AU - Demuth, S.

AU - Pfnür, Herbert

AU - Wippermann, Stefan Martin

AU - Lücke, Andreas

AU - Schmidt, Wolf Gero

AU - Tegenkamp, Christoph

PY - 2015/8/25

Y1 - 2015/8/25

N2 - The In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (σ||) and perpendicular (σ) components are measured separately. The analysis of the I(V) curves reveals that σ is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures.

AB - The In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (σ||) and perpendicular (σ) components are measured separately. The analysis of the I(V) curves reveals that σ is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures.

UR - http://www.scopus.com/inward/record.url?scp=84941089104&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.92.085426

DO - 10.1103/PhysRevB.92.085426

M3 - Article

AN - SCOPUS:84941089104

VL - 92

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 8

M1 - 085426

ER -

By the same author(s)