Details
| Original language | English |
|---|---|
| Article number | 176601 |
| Journal | Physical Review Letters |
| Volume | 115 |
| Issue number | 17 |
| Publication status | Published - 20 Oct 2015 |
Abstract
We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Physical Review Letters, Vol. 115, No. 17, 176601, 20.10.2015.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Interplay of Electron and Nuclear Spin Noise in n -Type GaAs
AU - Berski, Fabian
AU - Hübner, Jens
AU - Oestreich, Michael
AU - Ludwig, Arne
AU - Wieck, A. D.
AU - Glazov, Mikhail
PY - 2015/10/20
Y1 - 2015/10/20
N2 - We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise.
AB - We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise.
UR - http://www.scopus.com/inward/record.url?scp=84945573552&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.115.176601
DO - 10.1103/PhysRevLett.115.176601
M3 - Article
AN - SCOPUS:84945573552
VL - 115
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 17
M1 - 176601
ER -