Details
| Original language | English |
|---|---|
| Article number | 073710 |
| Journal | Journal of applied physics |
| Volume | 111 |
| Issue number | 7 |
| Publication status | Published - 1 Apr 2012 |
| Externally published | Yes |
Abstract
We measure the energy-dependent interface recombination parameters at the c-Si/Al 2O 3 interface using the frequency-dependent conductance technique. The hole capture cross section p (4±3)× 10 -16 cm 2 is energy-independent, whereas the electron capture cross section n shows a pronounced energy dependence and decreases from (7 ± 4)× 10 -15 cm 2 at midgap over two orders of magnitude toward the conduction band edge E c. The capture cross section ratio at midgap is highly asymmetric with σ n/σ p 5-70. The interface state density D it is of the order of 1× 10 11 eV -1 cm -2 at midgap. Besides the main defect, a second type of defect with a capture cross section below 10 -19 cm 2 is resolved near the valence band edge. Numerical calculations of the injection-dependent effective surface recombination velocity using the measured interface recombination parameters show an excellent agreement with experimental data measured using the photoconductance technique.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 111, No. 7, 073710, 01.04.2012.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Interface recombination parameters of atomic-layer-deposited Al 2O 3 on crystalline silicon
AU - Werner, F.
AU - Cosceev, A.
AU - Schmidt, J.
N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under contract number 0325050 (“ALD”).
PY - 2012/4/1
Y1 - 2012/4/1
N2 - We measure the energy-dependent interface recombination parameters at the c-Si/Al 2O 3 interface using the frequency-dependent conductance technique. The hole capture cross section p (4±3)× 10 -16 cm 2 is energy-independent, whereas the electron capture cross section n shows a pronounced energy dependence and decreases from (7 ± 4)× 10 -15 cm 2 at midgap over two orders of magnitude toward the conduction band edge E c. The capture cross section ratio at midgap is highly asymmetric with σ n/σ p 5-70. The interface state density D it is of the order of 1× 10 11 eV -1 cm -2 at midgap. Besides the main defect, a second type of defect with a capture cross section below 10 -19 cm 2 is resolved near the valence band edge. Numerical calculations of the injection-dependent effective surface recombination velocity using the measured interface recombination parameters show an excellent agreement with experimental data measured using the photoconductance technique.
AB - We measure the energy-dependent interface recombination parameters at the c-Si/Al 2O 3 interface using the frequency-dependent conductance technique. The hole capture cross section p (4±3)× 10 -16 cm 2 is energy-independent, whereas the electron capture cross section n shows a pronounced energy dependence and decreases from (7 ± 4)× 10 -15 cm 2 at midgap over two orders of magnitude toward the conduction band edge E c. The capture cross section ratio at midgap is highly asymmetric with σ n/σ p 5-70. The interface state density D it is of the order of 1× 10 11 eV -1 cm -2 at midgap. Besides the main defect, a second type of defect with a capture cross section below 10 -19 cm 2 is resolved near the valence band edge. Numerical calculations of the injection-dependent effective surface recombination velocity using the measured interface recombination parameters show an excellent agreement with experimental data measured using the photoconductance technique.
UR - http://www.scopus.com/inward/record.url?scp=84861754442&partnerID=8YFLogxK
U2 - 10.1063/1.3700241
DO - 10.1063/1.3700241
M3 - Article
AN - SCOPUS:84861754442
VL - 111
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
M1 - 073710
ER -