Details
| Original language | English |
|---|---|
| Article number | 074105 |
| Journal | Journal of applied physics |
| Volume | 99 |
| Issue number | 7 |
| Early online date | 5 Apr 2006 |
| Publication status | Published - 5 Apr 2006 |
Abstract
The Si/dielectric interface properties influence device performance significantly. Often the interface is not stable and changes during and/or after the growth. For a better understanding of the interface and layer formation processes of Nd2 O3 on Si(001), as an example for the lanthanide oxides, well-defined experimental studies by reflection high-energy diffraction and x-ray photoelectron spectroscopy were performed under ultraclean ultrahigh vacuum conditions of molecular beam epitaxy. Complementary investigations were performed by transmission electron microscopy. We found that Nd2 O3 is a candidate for replacing silicon dioxide as gate dielectric in future Si devices with suitable band gap and offset with respect to silicon. However, under ultrahigh vacuum conditions, silicide formation occurs in the initial stage of growth, which can result in large silicide inclusions and hole formation during further growth. This effect can be completely prevented by modifying the oxygen partial pressure during the interface formation and layer growth.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 99, No. 7, 074105, 05.04.2006.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon
AU - Fissel, A.
AU - Elassar, Z.
AU - Kirfel, O.
AU - Bugiel, E.
AU - Czernohorsky, M.
AU - Osten, H. J.
N1 - Funding Information: This work was partly funded by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D).
PY - 2006/4/5
Y1 - 2006/4/5
N2 - The Si/dielectric interface properties influence device performance significantly. Often the interface is not stable and changes during and/or after the growth. For a better understanding of the interface and layer formation processes of Nd2 O3 on Si(001), as an example for the lanthanide oxides, well-defined experimental studies by reflection high-energy diffraction and x-ray photoelectron spectroscopy were performed under ultraclean ultrahigh vacuum conditions of molecular beam epitaxy. Complementary investigations were performed by transmission electron microscopy. We found that Nd2 O3 is a candidate for replacing silicon dioxide as gate dielectric in future Si devices with suitable band gap and offset with respect to silicon. However, under ultrahigh vacuum conditions, silicide formation occurs in the initial stage of growth, which can result in large silicide inclusions and hole formation during further growth. This effect can be completely prevented by modifying the oxygen partial pressure during the interface formation and layer growth.
AB - The Si/dielectric interface properties influence device performance significantly. Often the interface is not stable and changes during and/or after the growth. For a better understanding of the interface and layer formation processes of Nd2 O3 on Si(001), as an example for the lanthanide oxides, well-defined experimental studies by reflection high-energy diffraction and x-ray photoelectron spectroscopy were performed under ultraclean ultrahigh vacuum conditions of molecular beam epitaxy. Complementary investigations were performed by transmission electron microscopy. We found that Nd2 O3 is a candidate for replacing silicon dioxide as gate dielectric in future Si devices with suitable band gap and offset with respect to silicon. However, under ultrahigh vacuum conditions, silicide formation occurs in the initial stage of growth, which can result in large silicide inclusions and hole formation during further growth. This effect can be completely prevented by modifying the oxygen partial pressure during the interface formation and layer growth.
UR - http://www.scopus.com/inward/record.url?scp=33645932313&partnerID=8YFLogxK
U2 - 10.1063/1.2188051
DO - 10.1063/1.2188051
M3 - Article
AN - SCOPUS:33645932313
VL - 99
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
M1 - 074105
ER -