Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon

Research output: Contribution to journal › Conference article › Research › peer review

Authors

  • H. Joerg Osten
  • Malte Czernohorsky
  • Eberhard Bugiel
  • Dirk Kuehne
  • Andreas Fissel

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Details

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume917
Issue number1
Publication statusPublished - 1 Dec 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 17 Apr 2006 → 21 Apr 2006

Abstract

We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3/Si interface structure. Optimized conditions (600°C, po2 = 5·10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA/cm2 at 1 V.

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Cite this

Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. / Osten, H. Joerg; Czernohorsky, Malte; Bugiel, Eberhard et al.
In: Materials Research Society Symposium Proceedings, Vol. 917, No. 1, 01.12.2006, p. 137-142.

Research output: Contribution to journal › Conference article › Research › peer review

Osten, HJ, Czernohorsky, M, Bugiel, E, Kuehne, D & Fissel, A 2006, 'Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon', Materials Research Society Symposium Proceedings, vol. 917, no. 1, pp. 137-142. https://doi.org/10.1557/proc-0917-e10-04
Osten, H. J., Czernohorsky, M., Bugiel, E., Kuehne, D., & Fissel, A. (2006). Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. Materials Research Society Symposium Proceedings, 917(1), 137-142. https://doi.org/10.1557/proc-0917-e10-04
Osten HJ, Czernohorsky M, Bugiel E, Kuehne D, Fissel A. Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. Materials Research Society Symposium Proceedings. 2006 Dec 1;917(1):137-142. doi: 10.1557/proc-0917-e10-04
Osten, H. Joerg ; Czernohorsky, Malte ; Bugiel, Eberhard et al. / Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. In: Materials Research Society Symposium Proceedings. 2006 ; Vol. 917, No. 1. pp. 137-142.
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AU - Fissel, Andreas

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AB - We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3/Si interface structure. Optimized conditions (600°C, po2 = 5·10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA/cm2 at 1 V.

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