Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • Y. Y. Gomeniuk
  • Y. V. Gomeniuk
  • A. N. Nazarov
  • V. S. Lysenko
  • H. J. Osten
  • A. Laha

Research Organisations

External Research Organisations

  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
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Details

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
PublisherElectrochemical Society, Inc.
Pages353-358
Number of pages6
Edition6
ISBN (electronic)9781607680932
ISBN (print)9781566777438
Publication statusPublished - 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 2009 → 7 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (electronic)1938-6737

Abstract

The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism.

ASJC Scopus subject areas

Cite this

Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. / Gomeniuk, Y. Y.; Gomeniuk, Y. V.; Nazarov, A. N. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. Electrochemical Society, Inc., 2009. p. 353-358 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Gomeniuk, YY, Gomeniuk, YV, Nazarov, AN, Lysenko, VS, Osten, HJ & Laha, A 2009, Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, Electrochemical Society, Inc., pp. 353-358, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 5 Oct 2009. https://doi.org/10.1149/1.3206634
Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J., & Laha, A. (2009). Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 353-358). (ECS Transactions; Vol. 25, No. 6). Electrochemical Society, Inc.. https://doi.org/10.1149/1.3206634
Gomeniuk YY, Gomeniuk YV, Nazarov AN, Lysenko VS, Osten HJ, Laha A. Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 ed. Electrochemical Society, Inc. 2009. p. 353-358. (ECS Transactions; 6). doi: 10.1149/1.3206634
Gomeniuk, Y. Y. ; Gomeniuk, Y. V. ; Nazarov, A. N. et al. / Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. Electrochemical Society, Inc., 2009. pp. 353-358 (ECS Transactions; 6).
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