Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Y. Y. Gomeniuk
  • Y. V. Gomeniuk
  • A. N. Nazarov
  • V. S. Lysenko
  • H. J. Osten
  • A. Laha

External Research Organisations

  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
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Details

Original languageEnglish
Title of host publicationNanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
Pages167-178
Number of pages12
Publication statusPublished - 4 Jul 2011
Event6th International Workshop on Semiconductor-on-Insulator Materials and Devices - Kyiv, Ukraine
Duration: 24 Oct 201028 Oct 2010

Publication series

NameAdvanced Materials Research
Volume276
ISSN (Print)1022-6680

Abstract

The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd 2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd 2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.

Keywords

    High-k dielectric, Interface state density, Rare-earth metal oxide

ASJC Scopus subject areas

Cite this

Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. / Gomeniuk, Y. Y.; Gomeniuk, Y. V.; Nazarov, A. N. et al.
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. 2011. p. 167-178 (Advanced Materials Research; Vol. 276).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Gomeniuk, YY, Gomeniuk, YV, Nazarov, AN, Lysenko, VS, Osten, HJ & Laha, A 2011, Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. Advanced Materials Research, vol. 276, pp. 167-178, 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, Kyiv, Ukraine, 24 Oct 2010. https://doi.org/10.4028/www.scientific.net/AMR.276.167
Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J., & Laha, A. (2011). Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. In Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (pp. 167-178). (Advanced Materials Research; Vol. 276). https://doi.org/10.4028/www.scientific.net/AMR.276.167
Gomeniuk YY, Gomeniuk YV, Nazarov AN, Lysenko VS, Osten HJ, Laha A. Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. In Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. 2011. p. 167-178. (Advanced Materials Research). doi: 10.4028/www.scientific.net/AMR.276.167
Gomeniuk, Y. Y. ; Gomeniuk, Y. V. ; Nazarov, A. N. et al. / Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. 2011. pp. 167-178 (Advanced Materials Research).
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